Semiconductor device, manufacturing method and apparatus for the same

  • US 6,969,915 B2
  • Filed: 01/14/2002
  • Issued: 11/29/2005
  • Est. Priority Date: 01/15/2001
  • Status: Active Grant
First Claim
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1. A semiconductor device having at least a solder bump formed of alloy solder on an under-bump layer including a first metal formed above a wiring layer, comprising:

  • an intermetallic compound including a metal that is the main component of the alloy solder and a second metal different from the metal that is the main component of the alloy solder, said second metal also being different from a metal in the adjoining under-bump layer, wherein the intermetallic compound is formed between the solder bump and the adjoining under-bump layer.

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