Method of forming narrow trenches in semiconductor substrates

• US 6,977,203 B2
• Filed: 11/20/2001
• Issued: 12/20/2005
• Est. Priority Date: 11/20/2001
• Status: Expired due to Term

• Current Assignee: General Semiconductor, Inc. (Vishay Intertechnology Incorporated)
• Original Assignee: General Semiconductor, Inc. (Vishay Intertechnology Incorporated)
• Inventors: Hshieh, Fwu-Iuan, So, Koon Chong, Pratt, Brian D., Amato, John E.
• Primary Examiner(s): Lebentritt, Michael
• Assistant Examiner(s): POMPEY, RON EVERETT
• Application Number:
  US10/010,162
• Publication Number:
  US 20030096479A1
• Time in Patent Office: 1,491 Days
• Field of Search: 438270-275, 438/589, 438/268, 438/700
• US Class Current: 438/268
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/3088 Process specially adapted to improve the resolution of the mask

Abstract

A method of forming a trench within a semiconductor substrate. The method comprises, for example, the following: (a) providing a semiconductor substrate; (b) providing a patterned first CVD-deposited masking material layer having a first aperture over the semiconductor substrate; (c) depositing a second CVD-deposited masking material layer over the first masking material layer; (d) etching the second masking material layer until a second aperture that is narrower than the first aperture is created in the second masking material within the first aperture; and (e) etching the semiconductor substrate through the second aperture such that a trench is formed in the semiconductor substrate. In preferred embodiments, the method of the present invention is used in the formation of trench MOSFET devices.

Claims

1. A method of forming a trench MOSFET comprising:

providing a semiconductor wafer of a first conductivity type;

depositing an epitaxial layer of said first conductivity type over said wafer, said epitaxial layer having a lower majority carrier concentration than said wafer;

forming a body region of a second conductivity type within an upper portion of said epitaxial layer;

providing a patterned first masking material layer over said epitaxial layer, said patterned first masking material layer comprising a densified non-doped silica glass layer overlaid by a positive photoresist material, and said patterned first masking material layer comprising a first aperture;

depositing a second masking material layer over said first masking material layer, said second masking material layer comprising a densified non-doped silica glass layer;

etching said second masking material layer until a second aperture is created in said second masking material layer within said first aperture, said second aperture being narrower than said first aperture;

forming a trench in said epitaxial layer by etching said semiconductor wafer through said second aperture; and

removing the first masking material layer and the second masking material layer prior to performing the following steps;

forming an insulating layer lining at least a portion of said trench;

forming a conductive region within said trench adjacent said insulating layer; and

forming a source region of said first conductivity type within an upper portion of said body region and adjacent said trench,

wherein said step of forming a source region is performed subsequent to said step of forming a trench.

2. The method of claim 1 wherein said patterned first masking material layer is provided over said semiconductor wafer by a method comprising:

providing a first masking material layer over said epitaxial layer;

applying a patterned photoresist layer over said first masking material layer; and

etching said first masking material layer through an aperture in said patterned photoresist layer such that said first aperture is formed in said first masking material layer.

3. The method of claim 1, wherein said semiconductor wafer is a silicon wafer and said epitaxial layer is a silicon epitaxial layer.

4. The method of claim 1, wherein said first and second masking material layers are of the same material composition.

5. The method of claim 1, wherein said first and second masking material layers are silicon dioxide layers.

6. The method of claim 1, wherein said process of etching said second masking material is an anisotropic, dry oxide etching process.

7. The method of claim 1, wherein said process of etching said semiconductor is an anisotropic, reactive ion etching process.

8. The method of claim 2, wherein said photoresist layer is a positive resist layer.

9. The method of claim 2, wherein said processes of etching said first and second masking material layers are anisotropic, dry oxide etching processes.

10. The method of claim 1, wherein said first trench mask aperture ranges from 0.4 to 0.8 microns in smallest dimension and said second trench mask aperture ranges from 0.2 to 0.6 microns in smallest dimension.