High density MRAM using thermal writing

  • US 6,980,468 B1
  • Filed: 10/28/2002
  • Issued: 12/27/2005
  • Est. Priority Date: 10/28/2002
  • Status: Active Grant
First Claim
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1. A memory cell comprising a magnetic cell junction, wherein the magnetic cell junction comprises a storing portion adapted to characterize a logic state of a bit written to the magnetic cell junction, and wherein the storing portion comprises an antiferromagnetic layer arranged in contact with an adjacent magnetic layer.

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