Fabrication process for a magnetic tunnel junction device

• US 6,984,529 B2
• Filed: 09/10/2003
• Issued: 01/10/2006
• Est. Priority Date: 09/10/2003
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies AG, International Business Machines Corporation
• Original Assignee: Infineon Technologies AG, International Business Machines Corporation
• Inventors: Ranade, Rajiv M., Allen, Russell D., Stojakovic, George, Kasko, Ihar, Neutzel, Joachim, Milkove, Keith R.
• Primary Examiner(s): Thompson, Craig A.
• Assistant Examiner(s): Dolan, Jennifer M
• Application Number:
  US10/659,136
• Publication Number:
  US 20050051820A1
• Time in Patent Office: 853 Days
• Field of Search: 438/3, 438734-736, 438/738, 438/740, 438/742, 216/22
• US Class Current: 438/3
• CPC Class Codes: G11C 11/22 using ferroelectric elements
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment

Abstract

A method of fabricating a magnetic tunnel junction (MTJ) device is provided. A patterned hard mask is oxidized to form a surface oxide thereon. An MTJ stack is etched in alignment with the patterned hard mask after the oxidizing of the patterned hard mask. Preferably, the MTJ stack etch recipe includes chlorine and oxygen. Etch selectivity between the hard mask and the MTJ stack is improved.

Claims

1. A method of fabricating a magnetic tunnel junction (MTJ) device, comprising:

providing an initial structure comprising;

an underlying layer;

a bottom tantalum nitride layer over the underlying layer,

a tantalum layer over the bottom tantalum nitride layer,

an MTJ stack over the tantalum layer,

a tantalum nitride cap layer over the MTJ stack,

a titanium layer over the tantalum nitride cap layer,

a titanium nitride layer over the titanium layer, and

a patterned photoresist layer over the titanium nitride layer;

etching through a majority of the titanium nitride layer with a first etch recipe;

etching through a remainder of the titanium nitride layer and a first portion of the titanium layer with a second etch recipe;

removing the photoresist layer;

etching through a remainder of the titanium layer and at least a majority of the tantalum nitride cap layer with a third etch recipe;

oxidizing the titanium nitride layer, the titanium layer, and the tantalum nitride cap layer to form a surface oxide thereon;

etching the MTJ stack with a fourth etch recipe; and

etching the tantalum layer and the bottom tantalum nitride layer with a fifth etch recipe.

2. The method of claim 1, further comprising:

rinsing with de-ionized water after etching the bottom tantalum nitride layer.

3. The method of claim 1, wherein the underlying layer is an insulating material having a conducting line formed therein.

4. The method of claim 3, wherein the insulating material is SiO₂, and wherein the conducting line comprises a liner layer and a copper line.

5. The method of claim 1, wherein the MTJ stack comprises:

a platinum manganese layer;

a cobalt iron layer over the platinum manganese layer;

an aluminum oxide layer over the cobalt iron layer; and

a nickel iron layer over aluminum oxide layer.

6. The method of claim 1, wherein the etching through the majority of the titanium nitride layer goes through about 90% of a total thickness of the titanium nitride layer.

7. The method of claim 1, wherein the first etch recipe comprises a flow of at least one of Cl₂ and NF₃.

8. The method of claim 7, wherein the first etch recipe comprises:

a flow of Cl₂ at about 40 sccm;

a flow of NF₃ at about 4 sccm;

a plasma source power of about 2000 watts;

a plasma bias power of about 220 watts; and

a pressure of about 2.5 mTorr.

9. The method of claim 1, wherein the second etch recipe comprises a fluorine-based etch chemistry.

10. The method of claim 9, wherein the second etch recipe comprises:

a flow of CF₄ at about 10 sccm;

a flow of CHF₃ at about 5 sccm;

a flow of Ar at about 60 sccm;

a plasma source power of about 1000 watts;

a plasma bias power of about 100 watts; and

a pressure of about 2.5 mTorr.

11. The method of claim 1, wherein the removing of the photoresist layer is performed using a flow of at least one of O₂ and Ar.

12. The method of claim 1, wherein the removing of the photoresist layer is performed before the etching with the third etch recipe.

13. The method of claim 1, wherein the third etch recipe comprises a fluorine-based etch chemistry.

14. The method of claim 13, wherein the third etch recipe comprises:

a flow of CF₄ at about 10 sccm;

a flow of CHF₃ at about 5 sccm;

a flow of Ar at about 60 sccm;

a plasma source power of about 1000 watts;

a plasma bias power of about 100 watts; and

a pressure of about 2.5 mTorr.

15. The method of claim 1, wherein the oxidizing to form the surface oxide is a plasma oxidation performed under conditions comprising:

a flow of O₂ at about 50 sccm;

a flow of Ar at about 50 sccm;

a plasma source power of about 1500 watts;

a plasma bias power of about 25 watts; and

a pressure of about 5 mTorr.

16. The method of claim 1, wherein the surface-oxidized titanium nitride, titanium, and tantalum nitride cap layers provide a hard mask structure for the etching of the MTJ stack.

17. The method of claim 1, wherein the fourth etch recipe comprises a flow of at least one of Cl₂, O₂, and Ar.

18. The method of claim 17, wherein the fourth etch recipe comprises:

a flow of Cl₂ at about 40 sccm;

a flow of O₂ at about 10 sccm;

a flow of Ar at about 20 sccm;

a plasma source power of about 2500 watts;

a plasma bias power of about 250 watts; and

a pressure of about 2.5 mTorr.

19. The method of claim 18, wherein the fourth etch recipe further comprises:

a self-bias voltage between about −

350 and about −

380 volts.

20. The method of claim 1, wherein the fifth etch recipe comprises a fluorine-based etch chemistry.

21. The method of claim 20, wherein the fifth etch recipe comprises:

a flow of CF₄ at about 60 sccm;

a flow of O₂ at about 5 sccm;

a flow of Ar at about 10 sccm;

a plasma source power of about 1000 watts;

a plasma bias power of about 100 watts; and

a pressure of about 2.5 mTorr.

22. The method of claim 21, wherein the fifth etch recipe further comprises:

a self-bias voltage between about −

90 and about −

110 volts.

23. The method of claim 1, further comprising:

over-etching with the fifth etch recipe to remove up to about 90 nm of the underlying layer.

24. The method of claim 1, wherein the initial structure further comprises a patterned ARC layer located between the photoresist layer and the titanium nitride layer, and wherein the removing of the photoresist layer also removes the ARC layer.

25. The method of claim 1, wherein at least one of the tantalum layer and the bottom tantalum nitride layer are oxidized upon exposure to the fourth etch recipe.

26. The method of claim 1, wherein an end point for the etching of the MTJ stack with the fourth etch recipe is measured with an end point function selected from a group consisting of optical emission spectroscopy, residual gas analysis, laser interferometry, interferometric end point, and full wafer imaging interferometry.

27. The method of claim 1, wherein the etching of the MTJ stack with the fourth etch recipe is a timed etch.

28. The method of claim 1, wherein the etching of the MTJ stack with the fourth etch recipe is extended as an overetch for an etch time between 0 and about 1000 seconds to remove redeposited material from sidewalls of the MTJ stack to prevent shorting across a tunnel barrier layer of the MTJ stack.

29. The method of claim 1, wherein timing for the etching with the fifth etch recipe is adjusted to remove redeposited materials from sidewalls of the MTJ stack to prevent shorting across a tunnel barrier layer of the MTJ stack.