Ferroelectric devices and method relating thereto

• US 6,985,054 B2
• Filed: 11/10/2003
• Issued: 01/10/2006
• Est. Priority Date: 05/09/2001
• Status: Expired due to Fees

• Current Assignee: Optis Cellular Technology LLC (Brevet Capital)
• Original Assignee: Telefonaktiebolaget LM Ericsson
• Inventors: Gevorgian, Spartak, Wikborg, Erland
• Primary Examiner(s): Jones, Stephen E.
• Application Number:
  US10/704,146
• Publication Number:
  US 20040150493A1
• Time in Patent Office: 792 Days
• Field of Search: 333/235, 333/205, 333/219, 333/204, 333/99.S, 505/210, 505/700, 505/701, 505/866
• US Class Current: 333/235
• CPC Class Codes: H01G 7/06 having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors electrets H01G7/02

Abstract

The present invention relates to an electrically controllable/tunable microwave device comprising a ferroelectric substrate with a variable dielectric permitivity and conducting electrodes, arranged on said substrate, and the capacitance of which depends on applied voltage C/V), the microwave device comprises at least two sections or parts of the substrate/electrodes for each of which different electrical field strengths are generated upon voltage application. Said generated electrical field strengths are controlled by means of the design of the device and/or the voltage application such that the slope (dC(dV) of the voltage dependence of the capacitance (C(V) of the microwave device can be controlled.

Claims

1. An electrically controllable/tunable microwave device having a capacitance which depends on applied voltage C(V), the device comprising:

a ferroelectric substrate with a variable dielectric permittivity and conducting electrodes arranged on said substrate;

at least two sections or parts of the substrate/electrodes for each of which different electrical field strengths are generated upon voltage application, wherein said generated electrical field strengths are controlled by design of the device and/or the voltage application such that a slope (dC(dV) of voltage dependence of the capacitance (C(V)) of the microwave device can be controlled;

wherein each section has a thickness and/or an electrode plate area differing from the thickness(es) and/or the plate area(s) of the other section(s), and wherein the dependance of the capacitance on the voltage is controlled by appropriate selection of the thicknesses and the electrode plate areas of the sections; and

wherein a same voltage is applied to the different sections and wherein, for the applied voltage, the generated electric field of a section depends on the thickness and the plate area of the section.

2. A microwave device according to claim 1,

further comprising a parallel plate resonator.

3. A microwave device according to claim 1,

further comprising a parallel plate capacitor, or a varactor.

4. A microwave device according to claim 1,

wherein the substrate comprises a bulk ferroelectric substrate, e.g. of SrTiO₃.

5. A microwave device according to claim 1,

wherein the device is so shaped and/or (a) voltage(s) is/are so applied that the slope of the dependence of the capacitance on voltage will be linear dC/dV being constant.

6. A microwave device according to claim 1,

further comprising one common electrode plate and one common ferroelectric substrate further comprising, for each section separate, second electrodes wherein for each section the thickness of the corresponding ferroelectric substrate portion is different, and wherein the second electrodes are provided at different distances from the common first electrode plate.

7. A microwave device according to claim 1,

wherein the device is disk shaped, circular, ellipsoidal or rectangular and wherein a thinnest section has a smallest plate area, said thinnest and smallest section being disposed at a center of the microwave device.

8. A microwave device according to claim 1,

wherein the thickness of the ferroelectric substrate is given a trapezoidal shape for providing the different sections.

9. A microwave device according to claim 1,

further comprising a large number of different sections, and wherein accuracy of controllability of the slope (dC/dV) of the line representing the dependence of the capacitance on the voltage increases with the number of sections.

10. A microwave device according to claim 9,

wherein differences in thickness and plate area from one section to another, between adjacent sections, are infinitesimal, such that the cross-section of the microwave device through the ferroelectric substrate and the common and/or the sectional electrodes exhibits a substantially continuously changing thickness with the thinnest section at the center.

11. A microwave device according to claim 1,

wherein generation of different electric fields in different parts/sections or of a continuously varying electric field exclusively is given by the design of the ferroelectric substrate and/or the conducting electrodes.

12. A microwave device according to claim 11,

wherein the sections have different thicknesses and plate areas and wherein a same voltage is applied to the different electrode sections.

13. A method of controlling a voltage/capacitance (V/C) characteristic of an electrically controllable/tunable microwave device comprising a ferroelectric substrate, with a variable dielectric permittivity and conducting electrodes disposed on said substrate, the method comprising the steps of:

disposing the ferroelectric substrate and the electrodes such that the device comprises at least two sections or parts;

providing for voltage application to the sections or parts such that a different electric field strength is generated for each of the sections or parts of the device, or that a substantially continuously varying electric field is generated, for controlling the slope (dC/dV) of the voltage dependence of the capacitance;

designing the substrate and the electrodes such that differently sized and/or shaped sections are formed; and

,

applying a same voltage to the different sections such that different electric field strengths are generated for each of said sections.

14. The method of claim 13, further comprising:

designing the substrate and/or the electrodes, such that upon voltage application the capacitance varies linearly with the applied voltage, i.e. dC/dV is constant.

15. The method of claim 13, further comprising:

designing the substrate and the electrodes such that a parallell plate device is formed and such that a first section has a first (plate) area and a first thickness, and for subsequent sections the thickness and the area increases stepwise or continuously.

16. The method of claim 15,

wherein on one side of the substrate a common electrode plate is disposed and wherein the device comprises a parallel plate resonator or capacitor.

17. The method of claim 16,

characterized in

that it comprises the steps of:

providing a number of electrically separate sections of the same size and shape,

applying different voltages to the similarly shaped sections such that for each section a different electrical field is generated.

18. A method of claim 16, further comprising:

designing the ferroelectric substrate and/or electrodes and/or providing for voltage application to the electrodes such that different electric fields are generated in different parts/sections of the device, or such that a continuously varying electric field is generated, wherein the electric field strength(s) are controlled for determining the slope (dC/dV) of the line representing the dependence of the capacitance on the voltage.