Light emitting diode having an adhesive layer and a reflective layer

• US 6,987,287 B2
• Filed: 07/04/2003
• Issued: 01/17/2006
• Est. Priority Date: 07/15/2002
• Status: Expired due to Term

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Liu, Wen-Huang, Hsieh, Min-Hsun, Tseng, Tzu-Feng, Wang, Jen-Shui, Yeh, Ting-Wei
• Primary Examiner(s): Hu, Shouxiang
• Application Number:
  US10/604,245
• Publication Number:
  US 20040104393A1
• Time in Patent Office: 928 Days
• Field of Search: 257 79-103, 458/455, 458/459
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.

Claims

1. A light emitting diode, comprising at least:

a substrate;

a reflective layer formed over the substrate;

a first reaction layer formed over said reflective layer;

a transparent adhesive layer formed over said first reaction layer;

a second reaction layer formed over said transparent adhesive layer;

and an LED stack formed over said second reaction layer;

wherein each of the first and second reaction layers is formed to enhance an adhesion provided by the transparent adhesive layer;

wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), and perfluorocyclobutane (PFCB); and

wherein each said first and second reaction layers comprises at least a material selected from the group consisting of SiNx, Ti, and Cr.

2. A light emitting diode according to claim 1, further comprising a transparent conductive layer between said second reaction layer and said LED stack.

3. A light emitting diode according to claim 1, wherein said reflective layer is a reflective metal layer.

4. A light emitting diode according to claim 3, wherein said reflective metal layer comprises at least a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, and AuZn.

5. A light emitting diode, comprising at least:

a reflective means;

a first reaction layer formed over said reflective means;

a transparent adhesive layer formed over said first reaction layer;

a second reaction layer formed over said transparent adhesive layer; and

an LED stack formed over said second reaction layer;

wherein the first and second reaction layers enhance adhesion provided by the transparent adhesive layer,

wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), and perfluorocyclobutane (PFCB); and

wherein each said first and second reaction layers comprises at least a material selected from the group consisting of SiNx, Ti, and Cr.

6. A light emitting diode, comprising at least:

a substrate;

a reflective layer disposed on the substrate;

a first reaction layer formed on said reflective layer;

a transparent adhesive layer formed directly on said first reaction layer, said first reaction layer adhering to the transparent adhesive layer;

a second reaction layer formed directly on said transparent adhesive layer, said second reaction layer adhering to the transparent adhesive layer; and

an LED stack formed over said second reaction layer,

wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), and perfluorocyclobutane (PFCB); and

wherein each said first and second reaction layers comprises at least a material selected from the group consisting of SiNx, Ti, and Cr.

7. A light emitting diode according to claim 6, further comprising a transparent conductive layer between said second reaction layer and said LED stack.

8. A light emitting diode according to claim 6, wherein said reflective layer is a reflective metal layer.

9. A light emitting diode according to claim 8, wherein said reflective metal layer comprises at least a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, and AuZn.