High frequency switch circuit
First Claim
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1. A high frequency switch circuit, comprising:
- a plurality of high frequency terminals which input/output a high frequency signal, a plurality of high frequency semiconductor switch sections which are arranged on lines coupling said high frequency terminals, a DC potential isolating circuit which isolates said plurality of high frequency semiconductor switch sections from each other in a DC state, and a plurality of DC potential transmission sections, each DC potential transmission section coupling a control side of an associated high frequency semiconductor switching section to at least one of an input side and an output side of another one of said plurality of high frequency semiconductor switch sections.
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Abstract
A high frequency switch circuit including high frequency terminals which input/output a high frequency signal, high frequency semiconductor switch sections which are arranged on lines coupling the high frequency terminals, a DC potential isolating circuit which isolates the plurality of high frequency semiconductors switch sections from each other in a DC state, and DC potential transmission sections. Each DC potential transmission section couples a control side of an associated high frequency semiconductor switching section to at least one of an input side and an output side of another one of the plurality of high frequency semiconductor switch sections.
21 Citations
20 Claims
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1. A high frequency switch circuit, comprising:
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a plurality of high frequency terminals which input/output a high frequency signal, a plurality of high frequency semiconductor switch sections which are arranged on lines coupling said high frequency terminals, a DC potential isolating circuit which isolates said plurality of high frequency semiconductor switch sections from each other in a DC state, and a plurality of DC potential transmission sections, each DC potential transmission section coupling a control side of an associated high frequency semiconductor switching section to at least one of an input side and an output side of another one of said plurality of high frequency semiconductor switch sections. - View Dependent Claims (2, 3, 13)
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4. A high frequency switch circuit comprising:
- first, second, and third high frequency terminals which input/output high frequency signals;
a first high frequency semiconductor switch section which is connected between said third high frequency terminal and said first high frequency terminal;
a second high frequency semiconductor switch section which is connected between said third high frequency terminal and said second high frequency terminal;
a first switching signal terminal which controls switching operation of said first high frequency semiconductor switch section;
a second switching signal terminal which controls switching operation of said second high frequency semiconductor switch section;
a DC potential isolating section which is connected between said third high frequency terminal and said first and second high frequency semiconductor switch sections, and isolates said first high frequency semiconductor switch section and said second high frequency semiconductor switch section in a DC state;
a first potential transmission section which is connected between said second switching signal terminal and said first high frequency terminal, and applies to said first high frequency terminal a DC potential applied to said second switching signal terminal; and
a second potential transmission section which is connected between said first switching signal terminal and said second high frequency terminal, and applies to said second high frequency terminal a DC potential applied to said first switching signal terminal. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12)
- first, second, and third high frequency terminals which input/output high frequency signals;
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5. A high frequency switch circuit comprising:
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first, second, third, and fourth high frequency terminals which input/output high frequency signals;
a first high frequency semiconductor switch section which is connected between said first high frequency terminal and said second high frequency terminal;
a second high frequency semiconductor switch section which is connected between said second high frequency terminal and said third high frequency terminal;
a third high frequency semiconductor switch section which is connected between said third high frequency terminal and said fourth high frequency terminal;
a fourth high frequency semiconductor switch section which is connected between said fourth high frequency terminal and said first high frequency terminal;
a first switching signal terminal which controls switching operation of said first and third high frequency semiconductor switch sections;
a second switching signal terminal which controls switching operation of said second and fourth high frequency semiconductor switch sections;
a first DC potential isolating section which is connected between said first high frequency terminal and said fourth and first high frequency semiconductor switch sections, and isolates said fourth high frequency semiconductor switch section and said first high frequency semiconductor switch section in a DC state;
a second DC potential isolating section which is connected between said second high frequency terminal and said first and second high frequency semiconductor switch sections, and isolates said first high frequency semiconductor switch section and said second high frequency semiconductor switch section in the DC state;
a third DC potential isolating section which is connected between said third high frequency terminal and said second and third high frequency semiconductor switch sections, and isolates said second high frequency semiconductor switch section and said third high frequency semiconductor switch section in the DC state;
a fourth DC potential isolating section which is connected between said fourth high frequency terminal and said third and fourth high frequency semiconductor switch sections, and isolates said third high frequency semiconductor switch section and said fourth high frequency semiconductor switch section in the DC state;
a first potential transmission section which is connected between said second switching signal terminal and at least one of an input side and an output side of said first high frequency semiconductor switch section, and applies to said at least one of the input side and the output side a DC potential applied to said second switching signal terminal;
a second potential transmission section which is connected between said first switching signal terminal and at least one of an input side and an output side of said second high frequency semiconductor switch section, and applies to said at least one of the input side and the output side a DC potential applied to said first switching signal terminal;
a third potential transmission section which is connected between said second switching signal terminal and at least one of an input side and an output side of said third high frequency semiconductor switch section, and applies to said at least one of the input side and the output side a DC potential applied to said second switching signal terminal; and
a fourth potential transmission section which is connected between said first switching signal terminal and at least one of an input side and an output side of said fourth high frequency semiconductor switch section, and applies to said at least one of the input side and the output side a DC potential applied to said first switching signal terminal. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification