In-situ nitride/oxynitride processing with reduced deposition surface pattern sensitivity

  • US 7,009,226 B1
  • Filed: 07/12/2004
  • Issued: 03/07/2006
  • Est. Priority Date: 07/12/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a plurality of transistors formed on the substrate, each transistor comprising source/drain regions and a gate electrode, having an upper and side surfaces, over the substrate with a gate dielectric layer therebetween, the gate electrodes being separated by a gap;

    a conformal stressed nitride liner over the upper and side surfaces of the gate electrodes and over the source/drain regions; and

    a dielectric layer over the transistors and filling the gaps between the gate electrodes.

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