Photonic crystal light emitting device
First Claim
1. A light emitting device comprising:
- a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and
a photonic crystal structure formed in an n-type region;
wherein the p-type region is substantially planar and the photonic crystal structure does not extend into the p-type region.
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Accused Products
Abstract
A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.
182 Citations
38 Claims
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1. A light emitting device comprising:
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a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and
a photonic crystal structure formed in an n-type region;
wherein the p-type region is substantially planar and the photonic crystal structure does not extend into the p-type region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A light emitting device comprising:
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a first layer of first conductivity type;
a first layer of second conductivity type;
an active region disposed between a layer of first conductivity type and a layer of second conductivity type;
a tunnel junction, the tunnel junction comprising;
a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; and
a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type; and
a third layer of first conductivity type;
wherein a thickness of the third layer of first conductivity type varies periodically;
wherein the tunnel junction is between the first layer of first conductivity type and the third layer of first conductivity type. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A method comprising:
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forming a first layer of first conductivity type;
forming a first layer of second conductivity type;
forming an active region between a layer of first conductivity type and a layer of second conductivity type;
forming a tunnel junction, the tunnel junction comprising;
a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; and
a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type;
forming a third layer of first conductivity type; and
forming a plurality of holes formed in the third layer of first conductivity type;
wherein;
the tunnel junction is between the first layer of first conductivity type and the third layer of first conductivity type;
the plurality of holes formed a lattice; and
a lattice type, lattice constant, hole diameter, and hole depth are selected to create a predetermined radiation pattern.
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33. A light emitting device comprising:
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a III-nitride semiconductor structure including an active region disposed between a n-type and a p-type region; and
a photonic crystal structure formed in an n-type region, the photonic crystal comprising a planar lattice of holes, each of the holes having a depth extending from a top opening to a bottom surface, wherein the top opening of the holes are located on a surface of the n-type region in which the photonic crystal structure is formed. - View Dependent Claims (34, 35, 36, 37, 38)
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Specification