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Photonic crystal light emitting device

  • US 7,012,279 B2
  • Filed: 10/21/2003
  • Issued: 03/14/2006
  • Est. Priority Date: 10/21/2003
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and

    a photonic crystal structure formed in an n-type region;

    wherein the p-type region is substantially planar and the photonic crystal structure does not extend into the p-type region.

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