Method and apparatus for implementing a co-axial wire in a semiconductor chip
First Claim
1. A coaxial shield for a semiconductor chip comprising:
- a top vertical shield wire formed in a top metal layer of a semiconductor chip wherein the top vertical shield wire has a selected length for providing a coaxial shield;
a first side shield wire formed in an intermediate metal layer of the semiconductor chip;
a first upper via formed in a first dielectric layer of the semiconductor chip that extends lengthwise parallel to the first side shield wire to electrically connect the first side shield wire to the top vertical shield wire along the selected length;
a second side shield wire formed opposite the first side shield wire in the intermediate metal layer of the semiconductor chip having a length corresponding to the selected length wherein the second side shield wire extends lengthwise parallel to the first side shield wire; and
a second upper via formed in the first dielectric layer that extends lengthwise parallel to the second side shield wire to electrically connect the second side shield wire to the top vertical shield wire along the length corresponding to the selected length.
10 Assignments
0 Petitions
Accused Products
Abstract
A coaxial shield for a semiconductor chip includes: a top vertical shield wire formed in a top metal layer of a semiconductor chip wherein the top vertical shield wire has a selected length for providing a coaxial shield; a first side shield wire formed in an intermediate metal layer of the semiconductor chip; a first upper via formed in a first dielectric layer of the semiconductor chip that extends lengthwise parallel to the first side shield wire to electrically connect the first side shield wire to the top vertical shield wire along the selected length; a second side shield wire formed in the intermediate metal layer of the semiconductor chip having a length corresponding to the selected length wherein the second side shield wire extends lengthwise parallel to the first side shield wire; and a second upper via formed in the first dielectric layer that extends lengthwise parallel to the second side shield wire to electrically connect the second side shield wire to the top vertical shield wire along the length corresponding to the selected length.
15 Citations
16 Claims
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1. A coaxial shield for a semiconductor chip comprising:
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a top vertical shield wire formed in a top metal layer of a semiconductor chip wherein the top vertical shield wire has a selected length for providing a coaxial shield; a first side shield wire formed in an intermediate metal layer of the semiconductor chip; a first upper via formed in a first dielectric layer of the semiconductor chip that extends lengthwise parallel to the first side shield wire to electrically connect the first side shield wire to the top vertical shield wire along the selected length; a second side shield wire formed opposite the first side shield wire in the intermediate metal layer of the semiconductor chip having a length corresponding to the selected length wherein the second side shield wire extends lengthwise parallel to the first side shield wire; and a second upper via formed in the first dielectric layer that extends lengthwise parallel to the second side shield wire to electrically connect the second side shield wire to the top vertical shield wire along the length corresponding to the selected length. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of shielding a volume in a semiconductor chip comprising steps of:
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forming a top vertical shield wire in a top metal layer of a semiconductor chip wherein the top vertical shield wire has a selected length for providing a coaxial shield; forming a first side shield wire in an intermediate metal layer of the semiconductor chip; forming a first upper via in a first dielectric layer of the semiconductor chip that extends lengthwise parallel to the first side shield wire to electrically connect the first side shield wire to the top vertical shield wire along the selected length; forming a second side shield wire in the intermediate metal layer of the semiconductor chip having a length corresponding to the selected length wherein the second side shield wire extends lengthwise parallel to the first side shield wire; and forming a second upper via in the first dielectric layer that extends lengthwise parallel to the second side shield wire to electrically connect the second side shield wire to the top vertical shield wire along the length corresponding to the selected length. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification