Selective etch process for making a semiconductor device having a high-k gate dielectric
First Claim
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1. A method for making a semiconductor device comprising:
- forming a high-k gate dielectric layer on a substrate; and
adding impurities to a first portion of the high-k gate dielectric layer to ensure that it may be removed selectively to a second portion of the high-k gate dielectric layer, wherein the impurities comprise a halide.
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Abstract
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and modifying a first portion of the high-k gate dielectric layer to ensure that it may be removed selectively to a second portion of the high-k gate dielectric layer.
57 Citations
17 Claims
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1. A method for making a semiconductor device comprising:
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forming a high-k gate dielectric layer on a substrate; and adding impurities to a first portion of the high-k gate dielectric layer to ensure that it may be removed selectively to a second portion of the high-k gate dielectric layer, wherein the impurities comprise a halide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for making a semiconductor device comprising:
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forming a high-k gate dielectric layer on a substrate; forming a gate electrode on the high-k gate dielectric layer; etching the gate electrode to expose a first portion of the high-k gate dielectric layer; adding impurities to the first portion of the high-k gate dielectric layer, wherein a low power plasma enhanced chemical vapor deposition process is used to add impurities that comprise a mixture of a halogen and a halide; and removing the first portion of the high-k gate dielectric layer selective to a second portion of the high-k gate dielectric layer. - View Dependent Claims (10, 11, 12)
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13. A method for making a semiconductor device comprising:
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forming a high-k gate dielectric layer on a substrate; forming a polysilicon based gate electrode on the high-k gate dielectric layer; etching the polysilicon based gate electrode to expose a first portion of the high-k gate dielectric layer; applying a plasma enhanced chemical vapor deposition process to add impurities to the first portion of the high-k gate dielectric layer; and
thenexposing the first portion of the high-k gate dielectric layer to an acid that is selected from the group consisting of a halide based acid and phosphoric acid.
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14. A method for making a semiconductor device comprising:
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forming a high-k gate dielectric layer on a substrate; forming a polysilicon based gate electrode on the high-k gate dielectric layer; etching the polysilicon based gate electrode to expose a first portion of the high-k gate dielectric layer; applying a plasma enhanced chemical vapor deposition process to add impurities to the first portion of the high-k gate dielectric layer, wherein the plasma enhanced chemical vapor deposition process is performed at less than about 200 watts, and wherein the impurities comprise a mixture of a halogen and halide; and
thenexposing the first portion of the high-k gate dielectric layer to an acid that is selected from the group consisting of a halide based acid and phosphoric acid. - View Dependent Claims (15, 16, 17)
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Specification