Air gap interconnect structure and method of manufacture
First Claim
1. A method of forming air gaps in a starting structure on a semiconductor substrate comprising:
- depositing a first layer comprising a first material on the starting structure;
depositing a second layer comprising a second material on the first layer;
patterning the second layer, resulting in gaps between portions of the second layer; and
subjecting the substrate to a highly oxidizing environment so that the first material will substantially completely decompose into volatile products and the second material will partially decompose leaving a thin membrane layer.
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Abstract
A dual layer of polymeric material is deposited with a base layer and top layer resist onto an integrated circuit structure with topography. The base layer planarizes the surface and fills in the native topography. The base layer decomposes almost completely when exposed to an oxidizing environment. The top layer contains a high composition of oxidizing elements and is photosensitive. (i.e., the layer can be patterned by exposing normal lithographic techniques.) The patterning allows the creation of escape paths for the decomposition products of the underlying base layer. This structure is decomposed in an oxidizing ambient (or plasma) leaving behind a thin carbon-containing membrane. This membrane layer blocks deposition of future layers, creating air gaps in the structure.
79 Citations
16 Claims
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1. A method of forming air gaps in a starting structure on a semiconductor substrate comprising:
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depositing a first layer comprising a first material on the starting structure; depositing a second layer comprising a second material on the first layer; patterning the second layer, resulting in gaps between portions of the second layer; and subjecting the substrate to a highly oxidizing environment so that the first material will substantially completely decompose into volatile products and the second material will partially decompose leaving a thin membrane layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification