Codoped direct-gap semiconductor scintillators
First Claim
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1. An inorganic scintillator comprising:
- a direct-gap semiconductor and a pair of codopants in the semiconductor to provide dopant band to dopant trap radiative recombination, wherein one codopant is an acceptor dopant which produces holes in an acceptor band and the other dopant is a donor dopant trap which traps electrons until they recombine with holes in the acceptor band.
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Abstract
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.
19 Citations
11 Claims
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1. An inorganic scintillator comprising:
- a direct-gap semiconductor and a pair of codopants in the semiconductor to provide dopant band to dopant trap radiative recombination, wherein one codopant is an acceptor dopant which produces holes in an acceptor band and the other dopant is a donor dopant trap which traps electrons until they recombine with holes in the acceptor band.
- View Dependent Claims (4, 5, 6, 7)
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2. An inorganic scintillator comprising:
- a direct-gap semiconductor; and
a pair of codopants in the semiconductor to provide dopant band to dopant trap radiative recombination, wherein one codopant is an acceptor dopant which produces holes in an acceptor band and the other codopant is an isoelectronic dopant trap which traps electrons until they recombine with holes in the acceptor band. - View Dependent Claims (8, 9, 10, 11)
- a direct-gap semiconductor; and
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3. An inorganic scintillator comprising:
- a direct-gap semiconductor; and
a pair of codopants in the semiconductor to provide dopant band to dopant trap radiative recombination, wherein the direct-gap semiconductor and pair of codopants comprises CdS;
In,Te;
CdS;
In,Ag;
or CdS;
In,Na.
- a direct-gap semiconductor; and
Specification