Semiconductor device

  • US 7,053,461 B2
  • Filed: 08/27/2004
  • Issued: 05/30/2006
  • Est. Priority Date: 09/01/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate in which a semiconductor element is formed;

    multilayer wiring layers that are provided on the semiconductor substrate, for forming a structure connected with the semiconductor element;

    a spiral inductor that is formed of at least one layer of the multilayer wiring layers;

    a connection terminal that is formed of an uppermost layer of the multilayer wiring layers; and

    a shielding wiring pattern that is formed of the uppermost layer of the multilayer wiring layers and is disposed between the spiral inductor and the connection terminal to shield the spiral inductor from an electrical field change caused by an electrical potential change due to input and output signals that pass through the connection terminal.

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