Stacked RF power amplifier
First Claim
Patent Images
1. An RF power amplifier comprising:
- an integrated circuit;
a first power amplifier formed on the integrated circuit, the first power amplifier having a first switching device;
a second power amplifier tanned on the integrated circuit, the second power amplifier having a second switching device, wherein the first and second power amplifiers are connected in a stacked arrangement between a voltage supply and ground; and
wherein the first and second switching devices are electrically isolated from each other.
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Abstract
A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.
84 Citations
25 Claims
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1. An RF power amplifier comprising:
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an integrated circuit; a first power amplifier formed on the integrated circuit, the first power amplifier having a first switching device; a second power amplifier tanned on the integrated circuit, the second power amplifier having a second switching device, wherein the first and second power amplifiers are connected in a stacked arrangement between a voltage supply and ground; and wherein the first and second switching devices are electrically isolated from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of making a stacked RF power amplifier comprising:
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providing a integrated circuit; forming first and second stacked power amplifiers on the integrated circuit, wherein the first and second stacked power amplifiers each include at least one switching device; and electrically isolating a switching device of the first power amplifier with a switching device of the second power amplifier. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A stacked RF power amplifier comprising:
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an integrated circuit; first and second stacked power amplifiers formed on the integrated circuit, wherein each power amplifier includes at least one switching device having a substrate; and wherein the body of a switching device in the first power amplifier is electrically isolated from the body of a switching device in the second power amplifier. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A stacked RF power amplifier formed on an integrated circuit comprising:
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a first amplifier having a first transistor formed on the integrated circuit, the first transistor of the first amplifier having a transistor body; a second amplifier having a second transistor formed on the integrated circuit, the second transistor of the second amplifier having a transistor body; and wherein the transistor body of the first transistor of the first amplifier is isolated from the transistor body of the second transistor of the second amplifier. - View Dependent Claims (22, 23, 24, 25)
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Specification