Transparent oxide semiconductor thin film transistors
First Claim
1. A transistor comprising a an undoped, transparent, metal oxide semiconductor electrically coupled between a source electrode and a drain electrode, and a gate electrode electrically coupled to said undoped transparent metal oxide semiconductor, such that the application of a bias to the gate electrode controls electric current flow in the undoped transparent metal oxide semiconductor between source and drain electrodes.
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Accused Products
Abstract
Transistors fabricated with transparent oxide semiconductors are provided. The semiconductors are metal oxides deposited without the intentional incorporation of additional doping elements, and enable the fabrication of transparent thin film transistors. The transparent transistors can be used to control pixels in a display, without significantly reducing the active area of the pixels.
157 Citations
11 Claims
- 1. A transistor comprising a an undoped, transparent, metal oxide semiconductor electrically coupled between a source electrode and a drain electrode, and a gate electrode electrically coupled to said undoped transparent metal oxide semiconductor, such that the application of a bias to the gate electrode controls electric current flow in the undoped transparent metal oxide semiconductor between source and drain electrodes.
Specification