Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment

• US 7,067,976 B2
• Filed: 10/29/2004
• Issued: 06/27/2006
• Est. Priority Date: 07/03/2001
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Guharay, Karabi
• Assistant Examiner(s): Roy, Sikha
• Application Number:
  US10/976,988
• Publication Number:
  US 20050088088A1
• Time in Patent Office: 606 Days
• Field of Search: 313/512, 313504-506, 428/690, 428/917, 257/99, 257/100
• US Class Current: 313/512
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H05B 33/22 characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/846 comprising getter material or desiccants
• CPC Class Codes: H10K 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/179 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/166 using selective deposition, e.g. using a mask
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention uses plastic film in vacuum sealing an OLED. Inorganic insulating films which can prevent oxygen or water from being penetrated therein and an organic insulating film which has a smaller internal stress than that of the inorganic insulating films are laminated on an inside of the plastic film. By sandwiching the organic insulating film between the inorganic insulating films, a stress can be relaxed. Further, by laminating a plurality of inorganic insulating films, even if one of the inorganic insulating films has a crack, the other inorganic insulating films can effectively prevent oxygen or water from being penetrated into an organic light emitting layer. Further, the stress of the entire sealing film can be relaxed and cracking due to the stress takes place less often.

Claims

1. A light-emitting device comprising:

a panel including a first plastic substrate and a second plastic substrate;

a flexible tape attached to the panel;

a light emitting element formed between the first plastic substrate and the second plastic substrate;

a drying agent formed in contact with an end face of the panel and with the flexible tape;

a plurality of insulating films covering the first plastic substrate and the second plastic substrate; and

a plastic film covering the plurality of insulating films,

wherein an internal stress of at least one of the plurality of insulating films is smaller than those of the other insulating films.

2. A light-emitting device according to claim 1, wherein the second plastic substrate is flexible.

3. A light-emitting device according to claim 1, wherein the second plastic substrate comprises one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate.

4. A light-emitting device according to claim 1, wherein the other insulating films comprise one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and aluminum silicon oxynitride.

5. A light-emitting device according to claim 1, wherein the at least one of the plurality of insulating films comprises one selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, benzocyclobutene, an epoxy resin, polyethylene, polytetrafluoroethyelen, polystyrene, poly(p-phenylene vinylene), polyvinyl chloride, and a polyparaxylylene-based resin.

6. A light-emitting device according to claim 1, wherein the first plastic substrate is flexible.

7. A light-emitting device according to claim 1, wherein the plastic film is flexible.

8. A light-emitting device according to claim 1, wherein the plastic film comprises at least one selected from the group consisting of polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, and nylon.

9. A light-emitting device according to claim 1, wherein the drying agent comprises a barium oxide.

10. A light-emitting device according to claim 1, wherein the light-emitting device is incorporated in at least one selected from the group consisting of a video camera, a digital camera, a goggle-type display, a personal computer, and a portable telephone.

11. A light-emitting device comprising:

a panel including a first plastic substrate and a second plastic substrate;

a flexible tape attached to the panel;

a light emitting element formed between the first plastic substrate and the second plastic substrate;

a drying agent formed in contact with an end face of the panel and with the flexible tape;

a first insulating film covering the first plastic substrate and the second plastic substrate;

a second insulating film covering the first insulating film;

a third insulating film covering the second insulating film; and

a plastic film covering the third insulating film,

wherein an internal stress of the second insulating film is smaller than that of the first insulating film and that of the third insulating film.

12. A light-emitting device according to claim 11, wherein the second plastic substrate is flexible.

13. A light-emitting device according to claim 11, wherein the second plastic substrate comprises one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate.

14. A light-emitting device according to claim 11, wherein at least one of the first insulating film and the third insulating film comprises one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and aluminum silicon oxynitride.

15. A light-emitting device according to claim 11, wherein the second insulating film comprises one selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, benzocyclobutene, an epoxy resin, polyethylene, polytetrafluoroethyelen, polystyrene, poly(p-phenylene vinylene), polyvinyl chloride, and a polyparaxylylene-based resin.

16. A light-emitting device according to claim 11, wherein the first plastic substrate is flexible.

17. A light-emitting device according to claim 11, wherein the plastic film is flexible.

18. A light-emitting device according to claim 11, wherein the plastic film comprises one selected from the group consisting of polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, and nylon.

19. A light-emitting device according to claim 11, wherein the drying agent comprises a barium oxide.

20. A light-emitting device according to claim 11, wherein the light-emitting device is incorporated in at least one selected from the group consisting of a video camera, a digital camera, a goggle-type display, a personal computer, and a portable telephone.

21. A light-emitting device comprising:

a light emitting element formed over a substrate;

a flexible tape attached to the substrate;

a drying agent formed in contact with an end face of the substrate and with the flexible tape;

a plurality of insulating films covering the substrate and the light emitting element; and

a plastic film covering the plurality of insulating films,

wherein an internal stress of at least one of the plurality of insulating films is smaller than those of the other insulating films.

22. A light-emitting device according to claim 21, wherein the other insulating films comprise one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and aluminum silicon oxynitride.

23. A light-emitting device according to claim 21, wherein the at least one of the plurality of insulating films comprises one selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, benzocyclobutene, an epoxy resin, polyethylene, polytetrafluoroethyelen, polystyrene, poly(p-phenylene vinylene), polyvinyl chloride, and a polyparaxylylene-based resin.

24. A light-emitting device according to claim 21, wherein the substrate is flexible.

25. A light-emitting device according to claim 21, wherein the plastic film is flexible.

26. A light-emitting device according to claim 21, wherein the substrate comprises one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate.

27. A light-emitting device according to claim 21, wherein the plastic film comprises one selected from the group consisting of polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, and nylon.

28. A light-emitting device according to claim 21, wherein the drying agent comprises a barium oxide.

29. A light-emitting device according to claim 21, wherein the light-emitting device is incorporated in at least one selected from the group consisting of a video camera, a digital camera, a goggle-type display, a personal computer, and a portable telephone.

30. A light-emitting device comprising:

a light emitting element formed over a substrate;

a flexible tape attached to the substrate;

a drying agent formed in contact with an end face of the substrate and with the flexible tape;

a first insulating film covering the substrate and the light emitting element;

a second insulating film covering the first insulating film;

a third insulating film covering the second insulating film; and

a plastic film covering the third insulating film,

wherein an internal stress of the second insulating film is smaller than that of the first insulating film and that of the third insulating film.

31. A light-emitting device according to claim 30, wherein at least one of the first insulating film and the third insulating film comprises one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and aluminum silicon oxynitride.

32. A light-emitting device according to claim 30, wherein the second insulating film comprises one selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, benzocyclobutene, an epoxy resin, polyethylene, polytetrafluoroethyelen, polystyrene, poly(p-phenylene vinylene), polyvinyl chloride, and a polyparaxylylene-based resin.

33. A light-emitting device according to claim 30, wherein the substrate is flexible.

34. A light-emitting device according to claim 30, wherein the plastic film is flexible.

35. A light-emitting device according to claim 30, wherein the substrate comprises one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate.

36. A light-emitting device according to claim 30, wherein the plastic film comprises one selected from the group consisting of polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, and nylon.

37. A light-emitting device according to claim 30, wherein the drying agent comprises a barium oxide.

38. A light-emitting device according to claim 30, wherein the light-emitting device is incorporated in at least one selected from the group consisting of a video camera, a digital camera, a goggle-type display, a personal computer, and a portable telephone.

39. A semiconductor device comprising:

a plurality of thin film transistors formed over a substrate;

a flexible tape attached to the substrate;

a drying agent formed in contact with an end face of the substrate and with the flexible tape;

a plurality of insulating films covering the substrate and the plurality of thin film transistors; and

a plastic film covering the plurality of insulating films,

wherein an internal stress of at least one of the plurality of insulating films is smaller than those of the other insulating films.

40. A semiconductor device according to claim 39, wherein the other insulating films comprise one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and aluminum silicon oxynitride.

41. A semiconductor device according to claim 39, wherein the at least one of the plurality of insulating films comprises one selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, benzocyclobutene, an epoxy resin, polyethylene, polytetrafluoroethyelen, polystyrene, poly(p-phenylene vinylene), polyvinyl chloride, and a polyparaxylylene-based resin.

42. A semiconductor device according to claim 39, wherein the substrate is flexible.

43. A semiconductor device according to claim 39, wherein the plastic film is flexible.

44. A semiconductor device according to claim 39, wherein the substrate comprises one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate.

45. A semiconductor device according to claim 39, wherein the plastic film comprises one selected from the group consisting of polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, and nylon.

46. A semiconductor device according to claim 39, wherein the drying agent comprises a barium oxide.

47. A semiconductor device according to claim 39, wherein the semiconductor device is at least one selected from the group consisting of a video camera, a digital camera, a goggle-type display, a personal computer, and a portable telephone.

48. A semiconductor device comprising:

a plurality of thin film transistors formed over a substrate;

a flexible tape attached to the substrate;

a drying agent formed in contact with an end face of the substrate and with the flexible tape;

a first insulating film covering the substrate and the plurality of thin film transistor;

a second insulating film covering the first insulating film;

a third insulating film covering the second insulating film; and

a plastic film covering the third insulating film,

wherein an internal stress of the second insulating film is smaller than that of the first insulating film and that of the third insulating film.

49. A semiconductor device according to claim 48, wherein at least one of the first insulating film and the third insulating film comprises one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and aluminum silicon oxynitride.

50. A semiconductor device according to claim 48, wherein the second insulating film comprises one selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, benzocyclobutene, an epoxy resin, polyethylene, polytetrafluoroethyelen, polystyrene, poly(p-phenylene vinylene), polyvinyl chloride, and a polyparaxylylene-based resin.

51. A semiconductor device according to claim 48, wherein the substrate is flexible.

52. A semiconductor device according to claim 48, wherein the plastic film is flexible.

53. A semiconductor device according to claim 48, wherein the substrate comprises one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate.

54. A semiconductor device according to claim 48, wherein the plastic film comprises one selected from the group consisting of polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, and nylon.

55. A semiconductor device according to claim 48, wherein the drying agent comprises a barium oxide.

56. A semiconductor device according to claim 48, wherein the semiconductor device is at least one selected from the group consisting of a video camera, a digital camera, a goggle-type display, a personal computer, and a portable telephone.

57. A semiconductor device comprising:

a plurality of thin film transistors formed over a plastic substrate;

a flexible tape attached to the plastic substrate;

a drying agent formed in contact with an end face of the plastic substrate and with the flexible tape;

a plurality of insulating films covering the plastic substrate and the plurality of thin film transistors; and

a plastic film covering the plurality of insulating films,

wherein an internal stress of at least one of the plurality of insulating films is smaller than those of the other insulating films.

58. A semiconductor device according to claim 57, wherein the other insulating films comprise one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and aluminum silicon oxynitride.

59. A semiconductor device according to claim 57, wherein the at least one of the plurality of insulating films comprises one selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, benzocyclobutene, an epoxy resin, polyethylene, polytetrafluoroethyelen, polystyrene, poly(p-phenylene vinylene), polyvinyl chloride, and a polyparaxylylene-based resin.

60. A semiconductor device according to claim 57, wherein the plastic substrate is flexible.

61. A semiconductor device according to claim 57, wherein the plastic film is flexible.

62. A semiconductor device according to claim 57, wherein the plastic substrate comprises one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate.

63. A semiconductor device according to claim 57, wherein the plastic film comprises one selected from the group consisting of polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, and nylon.

64. A semiconductor device according to claim 57, wherein the drying agent comprises a barium oxide.

65. A semiconductor device according to claim 57, wherein the semiconductor device is at least one selected from the group consisting of a video camera, a digital camera, a goggle-type display, a personal computer, and a portable telephone.

66. A semiconductor device comprising:

a plurality of thin film transistors formed over a plastic substrate;

a flexible tape attached to the plastic substrate;

a drying agent formed in contact with an end face of the plastic substrate and with the flexible tape;

a first insulating film covering the plastic substrate and the plurality of thin film transistor;

a second insulating film covering the first insulating film;

a third insulating film covering the second insulating film; and

a plastic film covering the third insulating film,

wherein an internal stress of the second insulating film is smaller than that of the first insulating film and that of the third insulating film.

67. A semiconductor device according to claim 66, wherein at least one of the first insulating film and the third insulating film comprises one selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and aluminum silicon oxynitride.

68. A semiconductor device according to claim 66, wherein the second insulating film comprises one selected from the group consisting of polyimide, acrylic, polyamide, polyimideamide, benzocyclobutene, an epoxy resin, polyethylene, polytetrafluoroethyelen, polystyrene, poly(p-phenylene vinylene), polyvinyl chloride, and a polyparaxylylene-based resin.

69. A semiconductor device according to claim 66, wherein the plastic substrate is flexible.

70. A semiconductor device according to claim 66, wherein the plastic film is flexible.

71. A semiconductor device according to claim 66, wherein the plastic substrate comprises one selected from the group consisting of polyether sulfone, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate.

72. A semiconductor device according to claim 66, wherein the plastic film comprises one selected from the group consisting of polyester, polypropylene, polyvinyl chloride, polyvinyl fluoride, polystyrene, polyacrylonitrile, polyethylene terephthalate, and nylon.

73. A semiconductor device according to claim 66, wherein the drying agent comprises a barium oxide.

74. A semiconductor device according to claim 66, wherein the semiconductor device is at least one selected from the group consisting of a video camera, a digital camera, a goggle-type display, a personal computer, and a portable telephone.