Gate material for semiconductor device fabrication

  • US 7,074,655 B2
  • Filed: 09/28/2005
  • Issued: 07/11/2006
  • Est. Priority Date: 10/22/2002
  • Status: Active Grant
First Claim
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1. A method for forming a structure, the method comprising:

  • forming a gate of a transistor over a substrate, the gate defining a channel therebelow;

    introducing a plurality of dopants into the substrate proximate the channel to define a source and drain; and

    heating the substrate to a temperature for a time to activate the plurality of dopants,wherein the gate includes a depletion region having a thickness less than approximately 20 Angstroms, and at least one of the temperature and the time is sufficiently low so that diffusion of the plurality of dopants beyond the source and the drain is sufficiently low such that an off current of the transistor is low.

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