Concurrent measurement of critical dimension and overlay in semiconductor manufacturing

  • US 7,080,330 B1
  • Filed: 03/05/2003
  • Issued: 07/18/2006
  • Est. Priority Date: 03/05/2003
  • Status: Active Grant
First Claim
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1. A system that monitors and controls a semiconductor fabrication process comprising:

  • a structure formed on at least a portion of a wafer matriculating through the fabrication process that facilitates concurrent measurement of one or more critical dimensions and overlay,a measurement system that concurrently measures one or more critical dimensions and overlay by mapping the wafer into one or more grids that comprises one or more locations on which a grating structure is formed; and

    a control system operatively coupled to the measurement system and one or more fabrication components to selectively control one or more of the fabrication components or operating parameters of the fabrication components to mitigate overlay error and to bring critical dimensions within acceptable tolerances based upon one or more of the concurrent measurements taken by the measurement system.

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