Semiconductor device and method of manufactuing the same
First Claim
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1. A method of manufacturing a semiconductor device comprising:
- a semiconductor substrate;
an isolation region provided on a surface of the semiconductor substrate and including an isolation trench; and
a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising;
a tunnel insulating film;
a floating gate electrode provided on the tunnel insulating film;
a control gate electrode above the floating gate electrode; and
an interelectrode insulating film provided between the control gate electrode and the floating gate electrode,the method comprising;
forming an insulating film to be processed into the tunnel insulating film on the semiconductor substrate;
forming a semiconductor film to be processed into the floating gate electrode on the insulating film;
forming the isolation trench by etching the semiconductor film, the insulating film and the semiconductor substrate; and
annealing the floating gate electrode, the tunnel insulating film and the semiconductor substrate in water vapor atmosphere.
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Abstract
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
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16 Claims
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1. A method of manufacturing a semiconductor device comprising:
- a semiconductor substrate;
an isolation region provided on a surface of the semiconductor substrate and including an isolation trench; and
a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising;
a tunnel insulating film;
a floating gate electrode provided on the tunnel insulating film;
a control gate electrode above the floating gate electrode; and
an interelectrode insulating film provided between the control gate electrode and the floating gate electrode,the method comprising; forming an insulating film to be processed into the tunnel insulating film on the semiconductor substrate; forming a semiconductor film to be processed into the floating gate electrode on the insulating film; forming the isolation trench by etching the semiconductor film, the insulating film and the semiconductor substrate; and annealing the floating gate electrode, the tunnel insulating film and the semiconductor substrate in water vapor atmosphere. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
- a semiconductor substrate;
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