Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
First Claim
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1. A method for forming a nitride semiconductor device, comprising:
- (a) annealing a substrate;
(b) depositing a nitride-based nucleation layer on the substrate;
(c) growing one or more non-polar a-plane gallium nitride (GaN) layers on the nucleation layer;
(d) cooling the non-polar a-plane GaN layers under a nitrogen overpressure; and
(e) growing one or more non-polar (Al,B,In,Ga)N layers on the non-polar a-plane GaN layers.
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Abstract
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
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9 Claims
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1. A method for forming a nitride semiconductor device, comprising:
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(a) annealing a substrate; (b) depositing a nitride-based nucleation layer on the substrate; (c) growing one or more non-polar a-plane gallium nitride (GaN) layers on the nucleation layer; (d) cooling the non-polar a-plane GaN layers under a nitrogen overpressure; and (e) growing one or more non-polar (Al,B,In,Ga)N layers on the non-polar a-plane GaN layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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