Ion implantation ion source, system and method
First Claim
Patent Images
1. An ion source for use with an ion implant device, the ion source comprising:
- an ionization chamber defined by a plurality of side walls defining an ionization volume, one of said sidewalls including an ion extraction aperture for enabling an ion beam to be extracted from said ionization chamber along a predetermined axis defining an ion bean axis;
an electron beam source and an aligned beam receptor configured relative to said ionization chamber to cause an electron beam to be directed across the ionization volume of said ionization chamber in a direction generally perpendicular to said ion beam axis for ionizing gas in the ionization chamber by direct electron impact ionization by energetic electrons; and
a gas source in fluid communication with said ionization chamber.
3 Assignments
0 Petitions
Accused Products
Abstract
An ion source for an ion implantation system includes a vaporizer for producing a process gas; an electron source for generating an electron beam to ionize the process gas within a ionization chamber. The ionization chamber includes an extraction aperture for extracting an ion beam. The ion source, in accordance with the preset invention, is configured to be able to be retrofit into the design space of existing ion sources in, for example, Bernas source-based ion implanters.
63 Citations
70 Claims
-
1. An ion source for use with an ion implant device, the ion source comprising:
-
an ionization chamber defined by a plurality of side walls defining an ionization volume, one of said sidewalls including an ion extraction aperture for enabling an ion beam to be extracted from said ionization chamber along a predetermined axis defining an ion bean axis;
an electron beam source and an aligned beam receptor configured relative to said ionization chamber to cause an electron beam to be directed across the ionization volume of said ionization chamber in a direction generally perpendicular to said ion beam axis for ionizing gas in the ionization chamber by direct electron impact ionization by energetic electrons; and
a gas source in fluid communication with said ionization chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65)
-
-
66. A dual mode ion source comprising:
-
an ionization chamber defined by a plurality of side walls defining an ionization volume, one of said sidewalls including an ion extraction aperture for enabling an ion beam to be extracted from said ionization chamber along an ion beam axis, said ionization chamber having a predetermined voltage bias;
an electron source and an aligned electron receptor configured relative to said ionization chamber to cause an electron beam to be directed across said ionization volume for ionizing gas in said ionization chamber by direct impact ionization;
a gas source in fluid communication with said ionization chamber;
wherein said ion source is operable in a reflex mode and a non-reflex mode and includes a magnetic source for selectively generating a magnetic field that is configured to confine said electrons within said ionization volume during a reflex mode; and
a power supply for selectively biasing said electron receptor positively or negatively relative to said ionization chamber. - View Dependent Claims (67, 68, 69, 70)
-
Specification