Integrated circuit device

• US 7,109,591 B2
• Filed: 06/04/2004
• Issued: 09/19/2006
• Est. Priority Date: 06/04/2004
• Status: Expired due to Fees

• Current Assignee: Jonathan A. Hack, Timothy Hsieh
• Original Assignee: Jonathan A. Hack, Timothy Hsieh
• Inventors: Hack, Jonathan A., Hsieh, Timothy M.
• Primary Examiner(s): Tran, Thien F.
• Application Number:
  US10/860,316
• Publication Number:
  US 20050269719A1
• Time in Patent Office: 837 Days
• Field of Search: 257788-795
• US Class Current: 257/788
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/295 containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

An integrated circuit device having a semiconductor device and an encapsulating material on at least a portion of the semiconductor device and a method for encapsulating an integrated circuit device is disclosed. The encapsulating material includes a plurality of nanoparticles.

Claims

1. An integrated circuit device comprising:

a semiconductor device;

an encapsulant material encapsulating at least a portion of the semiconductor device, the encapsulant material comprising a plurality of nanoparticles, wherein the plurality of nanoparticles comprise a material selected from at least one of materials having a positive coefficient of thermal expansion and materials having a negative coefficient of thermal expansion, and wherein the content of nanoparticles in the encapsulant material is between about 1×

10<sup>−

4</sup> and 5×

10¹ parts per weight.

2. An integrated circuit device according to claim 1, wherein the plurality of nanoparticles are coated with an anti-agglomurant.

3. An integrated circuit device according to claim 1, wherein a mean particle diameter of the plurality of nanoparticles is from about 1 to 90 nm.

4. An integrated circuit device according to claim 1, wherein the plurality of nanoparticles are selected from oxides, nitrides, and sulfides.

5. An integrated circuit device according to claim 1, wherein the thermal expansion of the encapsulant is within ±

20% of the thermal expansion of the surface of the semiconductor device.

6. An integrated circuit device according to claim 1, wherein the plurality of nanoparticles comprise a material having a positive coefficient of thermal expansion.

7. An integrated circuit device according to claim 6, wherein the plurality of nanoparticles are selected from at least one of titanium dioxide (TiO₂), magnesium oxide (MgO), yttria (YtO), zirconia (ZrO₂), silicon oxide (SiO_x), CeO_x, alumina (Al₂O₃), lead oxide (PbO_x), carbon nanotubes, a composite of yttria and zirconia, gallium nitride (GaN), silicon nitride, aluminum nitride, zinc selenide (ZnSe), zinc sulfide (ZnS), an alloy comprising Zn, Se, S, and Te (Tellurium), nanofibers, single and multi-walled nanotubes.

8. An integrated circuit device according to claim 1, wherein the plurality of nanoparticles comprise a material having a negative coefficient of thermal expansion.

9. An integrated circuit device according to claim 8, wherein the plurality of nanoparticles are selected from at least one of Ni—

Ti alloys, ZrW₂O₈, ZrMo₂O₈, Y(WO₄)₃, V doped ZrP₂O₇, ZrV₂O₇, (Zr₂O)(PO₄)₂, ZnW, NaTi₂, Th₄(PO₄)₄P₂O₇, and AOMO₄, where A=Nb or Ta, and M=P, As, or V.