Method of making a hybrid substrate having a thin silicon carbide membrane layer

  • US 7,112,515 B2
  • Filed: 01/20/2004
  • Issued: 09/26/2006
  • Est. Priority Date: 03/01/2001
  • Status: Expired due to Fees
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First Claim
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1. A method of making a hybrid substrate assembly comprising:

  • implanting a preferential etching layer within a wafer to thereby form a membrane on a surface of the wafer, the preferential etching layer being located interiorly of at least first and second opposing surfaces of the wafer and the membrane being located between the preferential etching layer and the first surface of the wafer, having a different chemical composition than the preferential etching layer, and being more resistant to etching by a selected etchant than the preferential etching layer;

    permanently attaching a substrate-of-choice to the membrane; and

    etching the preferential etching layer with the selected etchant to separate the membrane from a remainder of the wafer and thereby provide a hybrid substrate assembly that includes the substrate-of-choice permanently attached to the membrane, wherein the wafer is less susceptible to the etchant than the preferential etching layer.

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