Abrasive, method of polishing target member and process for producing semiconductor device

  • US 7,115,021 B2
  • Filed: 01/11/2002
  • Issued: 10/03/2006
  • Est. Priority Date: 12/18/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. An abrasive comprising cerium oxide particles, said particles having a crystal grain boundary and having a maximum diameter of not large than 3000 nm.

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