Controlled polymerization on plasma reactor wall

• US 7,122,125 B2
• Filed: 11/04/2002
• Issued: 10/17/2006
• Est. Priority Date: 11/04/2002
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Lill, Thorsten B., Deshmukh, Shashank C.
• Primary Examiner(s): Norton, Nadine
• Assistant Examiner(s): Tran, Binh X.
• Application Number:
  US10/288,344
• Publication Number:
  US 20040084409A1
• Time in Patent Office: 1,443 Days
• Field of Search: 216/63, 216/64, 216/67, 216/71, 216/77
• US Class Current: 216/63
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

An integrated etch process, for example as used for etching an anti-reflection layer and an underlying aluminum layer, in which the chamber wall polymerization is controlled by coating polymer onto the sidewall by a plasma deposition process prior to inserting the wafer into the chamber, etching the structure, and after removing the wafer from the chamber, plasma cleaning the polymer from the chamber wall. The process is process is particularly useful when the etching is performed in a multi-step process and the polymer is used for passivating the etched structure, for example, a sidewall in an etched structure and in which the first etching step deposits polymer and the second etching step removes polymer. The controlled polymerization eliminates interactions of the etching with the chamber wall material, produces repeatable results between wafers, and eliminates in the etching plasma instabilities associated with changing wall conditions.

Claims

1. An integrated plasma etch process performed in a single etching reactor, comprising a plurality of etching cycles for processing sequential ones of a plurality of production substrates disposable on a pedestal adjacent a processing space of said reactor, wherein a side portion of said reactor surrounds said processing space, each etching cycle of said process comprising the following steps performed in the stated order of:

while no production substrate is disposed on said pedestal, depositing from a first gas mixture admitted into said chamber a first polymeric coating onto said side portion;

loading a sequential one of said plurality of production substrates onto said pedestal in said reactor adjacent said processing space;

etching said sequential one of said plurality of production substrates in an etching process that deposits a second polymeric coating onto said side portion, wherein said etching step includes

a first etching substep in which a third polymeric coating, which is at least a part of the second polymeric coating, is deposited onto said side portion, and

a second and subsequent etching substep in which said third polymeric coating is etched from said side portion;

unloading said sequential one of said plurality of production substrates from said pedestal; and

while no production substrate is disposed on said pedestal, cleaning said side portion of said reactor such that said second polymeric coating is removed from said side portion.

2. The process of claim 1, wherein said cleaning step includes exciting a gas containing oxygen into a plasma.

3. The process of claim 1, wherein no substrate is disposed on said pedestal during said depositing and cleaning steps.

4. The process of claim 1, wherein a dummy substrate is disposed on said pedestal during said depositing and cleaning steps.

5. The process of claim 1, wherein equal numbers of the depositing, etching and cleaning steps are performed during a time span during which the plurality of etching cycles are performed.

6. The process of claim 1, wherein said etching process etches a metal deposited on said sequential one substrate.

7. The process of claim 6, wherein said metal is aluminum.

8. The process of claim 1, wherein said depositing step includes exciting a gas containing carbon and fluorine into a plasma.

9. The process of claim 8, wherein said gas comprises carbon tetrafluoride.

10. The process of claim 8, wherein said gas is additionally used in said etching step.

11. The process of claim 8, wherein a pedestal is not electrically biased during said depositing step.

12. The process of claim 8, wherein said pedestal comprises a pedestal electrode which is electrically biased during said cleaning step.

13. An integrated silicon etch process, comprising the steps performed in a plasma reactor for each of a plurality of sequentially processed production wafers:

depositing from a plasma of a first gas mixture including CF₄ and HBr a first polymeric coating onto a part of said reactor;

a first etching step of etching a first layer overlying a silicon layer in one of said production wafers with a plasma of a second gas mixture, said first etching step causing a second polymeric coating to deposit on said part;

a second etching step of etching said silicon layer with a plasma of a third gas mixture comprising bromine; and

cleaning said part with a plasma of a fourth gas mixture comprising oxygen.

14. The process of claim 13, wherein said one of said production wafers is loaded into said reactor between said depositing and first etching steps and is removed from said reactor between said second etching and cleaning steps.

15. The process of claim 13, wherein said first layer is an anti-reflection coating.

16. The process of claim 15, wherein said first layer comprises an organic material, said second gas mixture comprises hydrogen bromide and oxygen, and said third gas mixture comprises hydrogen bromide, chlorine gas, and oxygen gas.

17. The process of claim 15, wherein said first layer comprises silicon oxynitride, said second gas mixture comprises a fluorocarbon, and said third gas mixture comprises hydrogen bromide, chlorine gas, and oxygen gas.