Semiconductor device and method of manufacturing the same

DC
  • US 7,126,174 B2
  • Filed: 11/24/2004
  • Issued: 10/24/2006
  • Est. Priority Date: 07/27/1995
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a trench isolation surrounding an active area of a semiconductor substrate;

    a gate insulating film formed over the active area;

    a gate electrode formed over the gate insulating film;

    first L-shaped sidewalls formed over the side surfaces of the gate electrode;

    first silicide layers formed on regions located on the sides of the first L-shaped sidewalls within the active areaan interconnection formed on the trench isolation; and

    second L-shaped sidewalls formed over the side surfaces of the interconnection.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×