Method and device for reducing interface area of a memory device

  • US 7,151,027 B1
  • Filed: 06/01/2004
  • Issued: 12/19/2006
  • Est. Priority Date: 06/01/2004
  • Status: Active Grant
First Claim
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1. A method for fabricating a memory device, said method comprising:

  • forming a poly-2 layer above a substrate at an interface between a memory array and a periphery of said memory device;

    etching said poly-2 layer proximate to said memory array; and

    etching said poly-2 layer proximate to said periphery such that a portion of said poly-2 layer remains at said interface.

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