Semiconductor memory device with on die termination circuit

• US 7,161,378 B2
• Filed: 01/05/2005
• Issued: 01/09/2007
• Est. Priority Date: 10/30/2004
• Status: Expired due to Fees

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Kang, Hee-Bok, Ahn, Jin-Hong
• Primary Examiner(s): Le; Don
• Application Number:
  US11/030,558
• Publication Number:
  US 20060091900A1
• Time in Patent Office: 734 Days
• Field of Search: 326/26, 326/27, 326/30, 326/82, 326 83- 87
• US Class Current: 326/30
• CPC Class Codes: H04L 25/0284 Arrangements to ensure DC-balance

Abstract

A semiconductor memory device having a data input/output pad connected to a data input node includes: an on die termination resistor one end of which is connected to the data input node; and a switch one end of which is connected to the other end of the on die termination resistor for connecting/disconnecting the on die termination resistor with an on die termination voltage.

Claims

1. A semiconductor memory device having a data input/output pad connected to a data input node, comprising:

an on die termination resistor, one end of which is connected to the data input node;

a switch, one end of which is connected to the other end of the on die termination resistor;

an on die termination pad coupled to the other end of the switch for receiving a first on die termination voltage from an external circuit; and

an on die termination voltage generator coupled to the other end of the switch for generating a second on die termination voltage,

wherein the switch supplies one of the first on die termination voltage and the second on die termination voltage as the on die termination voltage to the data input node.

2. The semiconductor memory device as recited in claim 1, wherein the switch connects the on die termination resistor to the on die termination voltage while data are inputted to the semiconductor memory device through the data input/output pad.

3. The semiconductor memory device as recited in claim 1, wherein the on die termination resistor is a variable resistor capable of changing a resistance.

4. The semiconductor memory device as recited in claim 3, further comprising:

a data input buffer for receiving the data outputted from the data input/output pad in order to input the data into the semiconductor memory device; and

a data output buffer for receiving data outputted from a memory core of the semiconductor memory device to thereby output the received data through the data input/output pad.

5. A semiconductor memory device for controlling on die termination operation, comprising:

a first data input/output pad connected to a first data input node;

a second data input/output pad connected to a second data input node;

a first on die termination resistors one end of which is connected to the first data input node;

a second on die termination resistors one end of which is connected to the second data input node;

a first switch, one end of which is connected to the other end of the first on die termination resistor;

a second switch, one end of which is connected to the other end of the second on die termination resistor;

an on die termination pad coupled to the other ends of the first and the second switches for receiving a first on die termination voltage from an external circuit; and

an on die termination voltage generator coupled to the other ends of the first switch and the second switches for generating a second on die termination voltage,

wherein the first and the second switches supply one of the first on die termination voltage and the second on die termination voltage as an on die termination voltage to the first and the second data input nodes.

6. The semiconductor memory device as recited in claim 5, wherein the first switch connects the first on die termination resistor to the on die termination voltage while data are inputted to the semiconductor memory device through the first data input/output pad.

7. The semiconductor memory device as recited in claim 6, wherein each of the first on die termination resistor and the second on die termination resistor is a variable resistor capable of changing a resistance.

8. The semiconductor memory device as recited in claim 7, further comprising:

a data input unit for comparing outputs of the first and the second data input/output pads to output a comparison result to a memory core of the semiconductor memory device;

a first data output buffer for receiving data output from the memory core to thereby output the data through the first data input/output pad; and

a second data output buffer for receiving the data to thereby output the data through the second data input/output pad.