Laser-irradiated thin films having variable thickness

• US 7,164,152 B2
• Filed: 01/09/2004
• Issued: 01/16/2007
• Est. Priority Date: 09/16/2003
• Status: Expired due to Fees

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: Im, James
• Primary Examiner(s): Smith; Zandra V.
• Assistant Examiner(s): Duong; Khanh
• Application Number:
  US10/754,157
• Publication Number:
  US 20050059223A1
• Time in Patent Office: 1,103 Days
• Field of Search: 257/72, 257/344, 257/347, 257/350, 257/356, 257/408, 257/763, 257/64, 257/65, 257/66, 257/67, 257/68, 257/69, 257/70
• US Class Current: 257/64
• CPC Class Codes: C30B 1/00 Single-crystal growth directly from the solid state unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30

Abstract

A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater than the second film thickness and the first and second film thicknesses are selected to provide a crystalline region having the degree and orientation of crystallization that is desired for a device component.

Claims

1. A film on a substrate, comprising:

a first crystalline region having a first film thickness and a crystalline grain structure having highly elongated crystal grains that are defined by a first set of grain boundaries that are substantially parallel to long axes of the grains; and

a second crystalline region having a second film thickness and one of a homogeneous small grained polycrystalline grain structure and a crystalline grain structure having elongated crystal grains that are defined by a first set of grain boundaries that are substantially parallel to long axes of the grain, wherein the first film thickness is greater than the second film thickness, wherein the first and second crystalline regions have a size sufficient to accommodate an active channel of an electronic device, and wherein the first region possesses fewer grain boundaries or other defects per unit area than the second region.

2. The film of claim 1, wherein the first and/or second crystalline region comprises a component of an electronic device.

3. The film of claim 2, wherein said component is an active channel for a diode or thin film transistor.

4. The film of claim 1, wherein the mobility of the first crystalline region of the film is greater than the mobility of the second crystalline region of the film.

5. The film of claim 1, wherein the first crystalline region of the film comprises an active channel for a high mobility thin film transistor.

6. The film of claim 5, wherein the second crystalline region of the film comprises an active channel for a low mobility thin film transistor.

7. The film of claim 1, wherein the film comprises a semiconductor material.

8. The film of claim 1, wherein the film comprises a metal.

9. The film of claim 1, wherein the first film thickness is in the range of about 50 nm to about 500 nm.

10. The crystalline film of claim 1, wherein the second film thickness is in the range of about 20 nm to about 200 nm.

11. The film of claim 1, wherein the first and/or second crystalline regions comprise a single crystal subregion having a dimension large enough to accommodate an active channel of a thin film transistor.

12. The film of claim 1, wherein the second crystalline region comprises elongated crystal grains that are defined by a first set of grain boundaries that are substantially parallel to long axes of the grains.

13. The film of claim 1, wherein the second crystalline region comprises elongated crystal grains that are defined by a first set of grain boundaries that are substantially parallel to long axes of the grains and a second set of grain boundaries that are substantially perpendicular to the long axes of the grains to define columns of elongated crystals.

14. The film of claim 1, wherein the second crystalline region comprises a homogeneous small grained polycrystalline grain structure.

15. The film of claim 1, wherein the elongated grains of the first crystalline region further comprise a second set of grain boundaries that are substantially perpendicular to the long axes of the grains to define columns of elongated crystals.

16. The film of claim 15, wherein the second crystalline region comprises elongated crystal grains that are defined by a first set of grain boundaries that are substantially parallel to long axes of the grains.

17. The film of claim 15, wherein the second crystalline region comprises a homogeneous small grained polycrystalline grain structure.

18. The film of claim 15, wherein the second crystalline region comprises elongated crystal grains that are defined by a first set of grain boundaries that are substantially parallel to long axes of the grains and a second set of grain boundaries that are substantially perpendicular to the long axes of the grains to define columns of elongated crystals.