Display device and photoelectric conversion device
First Claim
1. A photoelectric conversion device, comprising:
- first, second and third semiconductor regions disposed adjacently in sequence in direction parallel to a surface of an insulation substrate;
a first insulation layer formed on upper face of said first, second and third semiconductor regions;
a gate electrode formed on a portion of upper face of said first insulation layer;
a second insulation layer formed on upper face of said first insulation layer and said gate electrode; and
an electrode layer connected said first and third semiconductor layers via contacts formed on portions of said first and second insulation layers,said first semiconductor regions being formed by injecting a first conductive impurity in first dose amount;
said third semiconductor regions being formed by injecting a second conductive impurity in second dose amount;
said second semiconductor region being formed by injecting said second conductive impurity in third dose amount less than said second dose amount; and
a photodiode formed using the first, second, and third semiconductor regions.
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Accused Products
Abstract
A display device has display elements provided inside of pixels, each being formed in vicinity of intersections of signal lines and scanning lines aligned in matrix form; and photoelectric conversion elements, wherein each of the photoelectric conversion elements includes first, second and third semiconductor regions disposed adjacently in sequence in parallel to a surface of a substrate; a first electrode connected to the first semiconductor region; and a second electrode connected to the third semiconductor region, the first semiconductor region being formed by injecting a first conductive impurity in first dose amount; the third semiconductor region being formed by injecting a second conductive impurity in second dose amount; and the second semiconductor region being formed by injecting the first conductive impurity in third dose amount less than the first dose amount.
77 Citations
1 Claim
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1. A photoelectric conversion device, comprising:
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first, second and third semiconductor regions disposed adjacently in sequence in direction parallel to a surface of an insulation substrate; a first insulation layer formed on upper face of said first, second and third semiconductor regions; a gate electrode formed on a portion of upper face of said first insulation layer; a second insulation layer formed on upper face of said first insulation layer and said gate electrode; and an electrode layer connected said first and third semiconductor layers via contacts formed on portions of said first and second insulation layers, said first semiconductor regions being formed by injecting a first conductive impurity in first dose amount; said third semiconductor regions being formed by injecting a second conductive impurity in second dose amount; said second semiconductor region being formed by injecting said second conductive impurity in third dose amount less than said second dose amount; and a photodiode formed using the first, second, and third semiconductor regions.
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Specification
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- Resources
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Current AssigneeJapan Display Central Incorporated (Japan Display Incorporated)
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Original AssigneeToshiba Matsushita Display Technology (Japan Display Incorporated)
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InventorsNakamura, Takashi, Tada, Norio, Tada, Masahiro
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Primary Examiner(s)Huynh; Andy
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Application NumberUS10/924,940Publication NumberTime in Patent Office874 DaysField of Search257/88, 257/443, 257/292, 257/233, 257/431, 257/461, 257/463, 257/E27.133, 257/E25.032, 257/E31.115, 250/208.1US Class Current257/292CPC Class CodesG02F 1/13312 Circuits comprising photode...G02F 1/1362 Active matrix addressed cel...H04N 25/76 Addressed sensors, e.g. MOS...H04N 3/155 Control of the image-sensor...
