Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
First Claim
1. A vertical cavity surface emitting laser (VCSEL) comprising:
- an active region including nitrogen containing layers and having a first and a second outer edge, said active region further comprising at least one quantum well and at least two barrier layers disposed on each side of said at least one quantum well;
first and second extended barrier layers comprised of GaAs, wherein said first extended barrier layer is disposed next to and outside of said first outer edge of said active region and said second extended barrier layer is disposed next to and outside of said second outer edge of said active region; and
first and second confinement regions, at least one of the first and second confinement regions comprising aluminum, wherein said first confinement regions is disposed next to said first extended barrier layer and opposite said active region and said second confinement region is disposed next to said second extended barrier layer opposite said active region.
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Accused Products
Abstract
Incorporation of a GaAs “Extended lower barrier” in between quantum wells using nitrogen and confining layers using aluminum. Not to be confused with barrier layers used in quantum wells, the extended lower barrier is formed between the active region a nd the outer/confining layers where N and Al are respectively used. N and Al can be separated in the case where, for example, AlGaAs is being used in the confining layers and any nitrogen containing material is being used in the active region. Aluminum and Nitrogen when allowed to combine can cause deep traps and resultant non-radiative recombination, therefore N and Al pairing should be prevented. The GaAs extended barrier layer can provide a protective measure against such combination.
109 Citations
24 Claims
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1. A vertical cavity surface emitting laser (VCSEL) comprising:
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an active region including nitrogen containing layers and having a first and a second outer edge, said active region further comprising at least one quantum well and at least two barrier layers disposed on each side of said at least one quantum well; first and second extended barrier layers comprised of GaAs, wherein said first extended barrier layer is disposed next to and outside of said first outer edge of said active region and said second extended barrier layer is disposed next to and outside of said second outer edge of said active region; and first and second confinement regions, at least one of the first and second confinement regions comprising aluminum, wherein said first confinement regions is disposed next to said first extended barrier layer and opposite said active region and said second confinement region is disposed next to said second extended barrier layer opposite said active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A vertical cavity surface emitting laser (VCSEL), comprising:
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an active region comprising; at least one quantum well containing nitrogen and having layers of a semiconductor alloy under mechanical stress interspersed with thin layers of a substrate type material, wherein said layers of a substrate type material serve as mechanical stabilizers for the semiconductor alloy layers to prevent the semiconductor alloy layers from relaxing; and barrier layers disposed on each side of said at least quantum well, said barrier layers including nitrogen and sandwiching said at least one quantum well; extended barrier layers comprised of GaAs and sandwiching said active region; and confinement layers containing Al and sandwiching said extended barrier layers. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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24. A vertical cavity surface emitting laser (VCSEL) comprising:
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an active region including nitrogen containing layers and having a first and a second outer edge, said active region further comprising; at least one quantum well comprising layers of a semiconductor alloy under mechanical stress interspersed with thin layers of a substrate type material, wherein said thin layers of a substrate type material serve as mechanical stabilizers for the semiconductor alloy layers to prevent the semiconductor alloy layers from relaxing, wherein said semiconductor alloy comprises GaAs and at least one of;
In, Sb, P and N; andat least two barrier layers including nitrogen and disposed on each side of said at least one quantum well; first and second extended barrier layers comprised of GaAs, wherein said first extended barrier layer is disposed next to and outside of said first outer edge of said active region and said second extended barrier layer is disposed next to and outside of said second outer edge of said active region; and first and second confinement regions, at least one of the first and second confinement regions comprising aluminum, wherein said first confinement regions is disposed next to said first extended barrier layer and opposite said active region and said second confinement region is disposed next to said second extended barrier layer opposite said active region.
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Specification