Field effect transistor (FET) device having corrugated structure and method for fabrication thereof

  • US 7,170,118 B2
  • Filed: 08/01/2003
  • Issued: 01/30/2007
  • Est. Priority Date: 08/01/2003
  • Status: Active Grant
First Claim
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1. A field effect transistor (FET) device with enhanced performance within a decreased substrate area comprising;

  • a semiconductor substrate comprising an active region defined by isolation regions;

    a gate electrode formed over a portion of the active region and at least a portion of the isolation regions to cover and define a channel region within the active region; and

    a pair of source/drain regions formed within the active region and separated by the channel region, wherein said FET device further comprises at least one of;

    a corrugated interface of the active region including said channel region, said corrugated interface comprising rounded valley bottom portions; and

    a corrugated upper surface of the gate electrode.

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