Method and system for wideband device measurement and modeling

• US 7,171,325 B2
• Filed: 07/22/2004
• Issued: 01/30/2007
• Est. Priority Date: 07/22/2004
• Status: Expired due to Fees

• Current Assignee: Fronted Analog and Digital Technology Corporation
• Original Assignee: Fronted Analog and Digital Technology Corporation
• Inventors: Hsu, Yung-Jane, Chiou, Ming-Hsiang
• Primary Examiner(s): Barlow, John
• Assistant Examiner(s): KHUU, HIEN DIEU THI
• Application Number:
  US10/898,508
• Publication Number:
  US 20060020410A1
• Time in Patent Office: 922 Days
• Field of Search: 702/106, 702/120, 702/126
• US Class Current: 702/120
• CPC Class Codes: G01R 27/28 Measuring attenuation, gain, phase shift or derived characteristics of electric four pole networks, i.e. two-port networks; Measuring transient response in line transmission systems H04B3/46

Abstract

The method for wideband device measurement and modeling includes: measurement of an electronic device to obtain a set of time domain raw data representing characteristics of said device; conversion of said time domain raw data into frequency domain raw data; calibration and correction of embedded errors according to said frequency domain raw data to obtain clean frequency domain data representing characteristics of said device; conversion of said frequency domain data into time domain clean data; and establishment of equivalent model of said device according to said time domain data. The time domain raw data are obtained by applying to said device an ultra short impulse and measuring said impulse and its response from said device. Conversion between said time domain data and said frequency domain data may be Fourier transform.

Claims

1. A method for wideband measurement of an electronic device, comprising the steps of:

measurement of an electronic device to obtain a set of time domain raw data representing electrical characteristics of said device;

conversion of said time domain raw data into frequency domain raw data using a Fourier transform;

calibration and correction of embedded errors according to said frequency domain raw data to obtain clean frequency domain data representing electrical characteristics of said device;

conversion of said clean frequency domain data into clean time domain data; and

outputting said clean time domain data representing electrical characteristics of said device to an output means;

wherein said time domain raw data are obtained by applying to said device an ultra short impulse and measuring said impulse and its response from said device.

2. The wideband measurement method according to claim 1, wherein duration of said ultra short impulse is less than 100 picoseconds.

3. The wideband measurement method according to claim 2, wherein duration of said ultra short impulse is less than 30 picoseconds.

4. The wideband measurement method according to claim 1, wherein said signal pickup means measures said device and at least one standard device, including standard open, short, load and through, to obtain data representing said incident impulse, said reflected response and said transmitted response.

5. The wideband measurement method according to claim 1, wherein said calibration module calibrates said frequency domain data comprising the following steps:

calibrating said frequency domain data to obtain S parameters;

converting said S parameters to obtain Y parameters;

removing embedded errors from said Y parameters;

converting said Y parameter to obtain S parameters; and

obtaining said frequency domain data using said S parameters.

6. A method for modeling of an electronic device, comprising the steps of:

measurement of an electronic device to obtain a set of time domain raw data representing electrical characteristics of said device;

conversion of said time domain raw data into frequency domain raw data using a Fourier transform;

calibration and correction of embedded errors according to said frequency domain raw data to obtain clean frequency domain data representing electrical characteristics of said device;

conversion of said clean frequency domain data into clean time domain data;

establishment of an equivalent model of said device according to said clean time domain data; and

outputting the equivalent model of said device to an output means;

wherein said time domain raw data are obtained by applying to said device an ultra short impulse and measuring said impulse and its response from said device.

7. The modeling method according to claim 6, wherein duration of said ultra short impulse is less than 100 picoseconds.

8. The modeling method according to claim 7, wherein duration of said ultra short impulse is less than 30 picoseconds.

9. The modeling method according to claim 6, wherein said signal pickup means measures said device and at least one standard device, including standard open, short, load and through, to obtain data representing said incident impulse, said reflected response and said transmitted response.

10. The modeling method according to claim 6, wherein said calibration module calibrates said frequency domain data comprising the following steps:

calibrating said frequency domain data to obtain S parameters;

converting said S parameters to obtain Y parameters;

removing embedded errors from said Y parameters;

converting said Y parameter to obtain S parameters; and

obtaining said frequency domain data using said S parameters.

11. The modeling method according to claim 6, wherein said step of establishment of equivalent model comprises establishment of extended model using a conventional core model.

12. The modeling method according to claim 11, wherein said conventional core model comprises a BSIM model, a Gummel Poon model or a U model.