Focused ion beam deposition

• US 7,171,918 B2
• Filed: 07/30/2002
• Issued: 02/06/2007
• Est. Priority Date: 12/29/2000
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Gavish, Ilan, Greenzweig, Yuval
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US10/209,453
• Publication Number:
  US 20020197851A1
• Time in Patent Office: 1,652 Days
• Field of Search: 118/723.FI
• US Class Current: 118/723.0FI
• CPC Class Codes: C23C 16/047 using irradiation by energy or particles
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: C23C 16/486 using ion beam radiation
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28568 the conductive layers comprising transition metals H01L21/28518 takes precedence
• CPC Class Codes: H01L 21/76886 Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
• CPC Class Codes: H01L 21/76892 modifying the pattern

Abstract

Introducing at least one metal such as cobalt, molybdenum, metal carbonyl, tungsten, platinum, or other suitable metal to a focused ion beam. Introducing the focused ion beam to a substrate within a processing chamber. Forming at least one layer over a substrate. Applying heat to the layer by, for example, a laser.

Claims

1. A system comprising:

a chamber configured to house a substrate for processing;

an energy source coupled to the chamber;

an ion beam source coupled to the chamber;

at least one hot inert gas source coupled to the chamber for locally heating and crystallizing a layer formed by the ion beam source;

a system controller configured to control the introduction of at least one metal containing precursor into a focused ion beam and to control the introduction of the focused ion beam powered from the energy source; and

a memory coupled to the controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the system, the computer-readable program comprising;

instructions for controlling the energy source and for introducing the at least one metal containing precursor into the focused ion beam which is introduced into the chamber over the substrate in which the at least one metal from the at least one metal containing precursor forms at least one layer over the substrate; and

instructions for controlling said hot inert gas source to locally heat and crystallize the at least one layer.

2. The system of claim 1, wherein the at least one layer contains one of cobalt, layer carbonyl, molybdenum, platinum, and tungsten.

3. The system of claim 1, wherein the at least one metal containing precursor contains at least one of cobalt, metal carbonyl, molybdenum, platinum, and tungsten and is introduced into the focused ion beam at a chamber pressure in the range of 10⁻

5 to 10<sup>−

7</sup> torr and about room temperature.

4. The system of claim 1, wherein the focused ion beam heats a discrete area on the layer.

5. The system of claim 4, wherein one of a carbon and an oxygen is removed from the layer.

6. The system of claim 1, wherein the program includes instructions for introducing into the focused ion beam a precursor containing at least two of cobalt, metal carbonyl, molybdenum, platinum, and tungsten in a controllable ratio.