Optical active device

• US 7,181,120 B2
• Filed: 03/06/2003
• Issued: 02/20/2007
• Est. Priority Date: 09/26/2002
• Status: Expired due to Term

• Current Assignee: Kyoto University, Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Kyoto University, Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Noda, Susumu, Sugitatsu, Atsushi
• Primary Examiner(s): Font; Frank G.
• Assistant Examiner(s): WONG, ERIC K
• Application Number:
  US10/379,556
• Publication Number:
  US 20040062505A1
• Time in Patent Office: 1,447 Days
• Field of Search: 385129-132, 385/16, 385/125
• US Class Current: 385/131
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices

Abstract

In an optical device, a slab layer has an active layer sandwiched between two cladding layers. Periodic air holes are present in the slab layer. A linear defect region is present in a part of the air hole structures. As a result, laser oscillation is generated at the band end in a two-dimensional photonic crystal waveguide mode.

Claims

1. An optical active device comprising

a slab photonic crystal structure including a slab layer having a two-dimensional expanse and comprising:

an active layer, and

first and second cladding layers sandwiching the active layer, wherein the slab layer has

a plurality of air holes extending through the slab layer so that air contacts opposite surfaces of the slab layer, the active layer in the air holes, and surrounds the active layer and the first and second cladding layers, wherein the air holes are arranged periodically in the slab layer and produce a periodic refractive-index distribution structure in a two-dimensional plane, and

a waveguide including a first linear defect region in the periodic refractive-index distribution structure.

2. The optical active device according to claim 1, wherein one end, in a longitudinal direction, of the first linear defect region is terminated by the periodic refractive-index distribution structure within a plane including the slab layer.

3. The optical active device according to claim 1, wherein both ends, in a longitudinal direction, of the first linear defect region are terminated by the periodic refractive-index distribution structure within a plane including the slab layer.

4. The optical active device according to claim 1, wherein the active layer is present only where the first linear defect region is present.

5. The optical active device according to claim 1, wherein the periodic refractive-index distribution structure includes one of a point defect and an isolated defect.

6. The optical active device according to claim 5, including a plurality of one of the point defect and the isolated defect.

7. The optical active device according to claim 5, further comprising a control unit for controlling the refractive index of the one of the point defect and the isolated defect, independently of the first linear defect region.

8. The optical active device according to claim 5, further comprising a control unit for controlling the refractive index in a region near the one of the point defect and the isolated defect.

9. The optical active device according to claim 1, including a second linear defect region in the periodic refractive-index distribution structure.

10. The optical active device according to claim 1, including a second linear defect region in the periodic refractive-index distribution structure, and a control unit for controlling the refractive index of the second linear defect region, independently of the first linear defect region.

11. The optical active device according to claim 5, wherein the active layer is present only where the first linear defect region and the one of the point defect and the isolated defect are present, and including a control unit for controlling the refractive index of the one of the point defect and the isolated defect, independently of the first linear defect region.

12. The optical active device according to claim 5, further comprising a control unit for controlling the refractive index of a region between the first linear defect region and the one of the point defect and the isolated defect.

13. The optical active device according to claim 5, wherein the active layer is present only where the first linear defect region is present, and between the first linear defect region and the one of the point defect and the isolated defect.

14. The optical active device according to claim 5, further comprising:

an optical monitoring unit that monitors light emitted from the one of the point defect and the isolated defect; and

an optical property control unit for controlling optical properties of the optical active device, based on the light monitored.

15. The optical active device according to claim 1, further comprising a control unit for controlling the refractive index of the first linear defect region.

16. The optical active device according to claim 1, wherein the active layer is present in a portion excluding the portion where the first linear defect region is present.

17. The optical active device according to claim 1, including a second linear defect region extending substantially parallel to the first linear defect region, one of two first point defects and two isolated defects interacting with the second linear defect region, and one of a second point defect and a second isolated defect interacting with the first and second linear defect regions in the periodic refractive-index distribution structure, wherein

the second linear defect region is a master oscillator having a resonance frequency fixed by the one of the first point defects and the first isolated defects;

and

the first linear defect region is a slave power amplifier which amplifies light produced by the master oscillator and introduced from the one of the second point defect and the second isolated defect.

18. The optical active device according to claim 1, wherein the first linear defect region displaces one of the periodic refractive-index distribution structures in a direction perpendicular to the first linear defect region in a plane of the slab layer, changing width of the first linear defect region.

19. The optical active device according to claim 1, wherein the active layer and the first and second cladding layers comprise crystalline semiconductor materials.

20. The optical active device according to claim 19, wherein the active layer includes a material selected from the group consisting of InGaAsP, GaAs, GaP, GaInP, AlGaInP, GaAsP, and GaN, and the first and second cladding layers include a material selected from the group consisting of GaAs, AlGaAs, AlGaInP, InGaAsP, InP, and GaN.