Semiconductor device for sensor system

• US 7,187,961 B2
• Filed: 06/10/2003
• Issued: 03/06/2007
• Est. Priority Date: 06/26/2002
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Miyazaki, Masayuki, Yamashita, Shunzo, Suzuki, Kei, Aritsuka, Toshiyuki, Nakano, Sadaki
• Primary Examiner(s): WINAKUR, ERIC FRANK
• Application Number:
  US10/457,498
• Publication Number:
  US 20040000713A1
• Time in Patent Office: 1,365 Days
• Field of Search: 600/300, 600/310, 600/549, 600/595, 128/903
• US Class Current: 600/310
• CPC Class Codes: A61B 2560/0209 adapted for power saving
• CPC Class Codes: A61B 2560/0412 Low-profile patch shaped housings
• CPC Class Codes: A61B 2562/0219 Inertial sensors, e.g. accelerometers, gyroscopes, tilt switches
• CPC Class Codes: A61B 2562/028 Microscale sensors, e.g. electromechanical sensors [MEMS]
• CPC Class Codes: A61B 2562/08 Sensors provided with means for identification, e.g. barcodes or memory chips
• CPC Class Codes: A61B 5/0002 Remote monitoring of patients using telemetry, e.g. transmission of vital signals via a communication network A61B5/07 takes precedence; transmission systems for measured values G08C; transmission H04B; transmission of digital information H04L; wireless communication networks H04W
• CPC Class Codes: A61B 5/02055 Simultaneously evaluating both cardiovascular condition and temperature
• CPC Class Codes: A61B 5/02427 Details of sensor
• CPC Class Codes: A61B 5/0531 Measuring skin impedance
• CPC Class Codes: A61B 5/11 Measuring movement of the entire body or parts thereof, e.g. head or hand tremor, mobility of a limb for measuring pulse A61B5/02 ;A61B5/1038 takes precedence; motion detection to correct for motion artifacts in physiological signals A61B5/721
• CPC Class Codes: A61B 5/7232 involving compression of the physiological signal, e.g. to extend the signal recording period
• CPC Class Codes: G01D 9/005 Solid-state data loggers
• CPC Class Codes: G01K 2215/00 Details concerning sensor power supply
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10N 10/17 characterised by the structure or configuration of the cell or thermocouple forming the device
• CPC Class Codes: Y10S 128/903 Radio telemetry

Abstract

A semiconductor device is employable for a compact and light-weight sensor system that is free of the need for battery replacement. The semiconductor device has a sensor chip (SCHIP1) comprising sensors (TD1, AS1, PD1, GS1), an A/D conversion circuit (AD1), a microprocessor (CPU1), a memory (MEM1), a transmission circuit (RF1), and a power generation circuit (CM1). The sensors, the A/D conversion circuit, the microprocessor, the memory, and the transmission circuit are formed on one side (SIDE1) of a substrate, while the power generation unit is formed on the other side (SIDE2) of the substrate.

Claims

1. A semiconductor device, comprising:

a sensor for detecting a physical quantity of an object to be measured;

an A/D conversion circuit for amplifying a signal detected by said sensor and for converting the amplified signal to a digital signal;

a microprocessor for processing said digital signal;

a memory for storing information based on said digital signal;

a transmission circuit for transmitting said digital signal processed by said microprocessor to the outside; and

a power generator for generating electric power to be supplied to said sensor, said A/D conversion circuit, said microprocessor, said memory, and said transmission circuit, respectively,

wherein said semiconductor device further includes a power supply control circuit and a capacitor;

wherein said power supply control circuit is configured so as to control whether to supply electric power generated by said power generator to said sensor, said A/D converter, said microprocessor, said memory, and said transmission circuit; and

wherein said capacitor is configured so as to accumulate said electric power generated by said power generation unit.

2. The semiconductor device according to claim 1,

wherein said sensor, said A/D conversion circuit, said microprocessor, said memory, and said transmission circuit are formed on one side of a semiconductor substrate.

3. The semiconductor device according to claim 2,

wherein said transmission circuit is configured so as to transmit signals as pulse strings through a UWB (Ultra Wide Band), which employs an ultra wide band radio communication method.

4. The semiconductor device according to claim 2,

wherein said power generator is formed on the other side of said semiconductor substrate, which is the side opposite said side on which said sensor unit, said A/D conversion circuit, said microprocessor, said memory, said transmission/receiving circuit, and said power supply control circuit are formed.

5. The semiconductor device according to claim 2, comprising a mounting substrate,

wherein said semiconductor substrate is disposed on a first main surface of said mounting substrate;

and

wherein said power generator is disposed on a second main surface of said mounting substrate, which is the side opposite said first main surface.

6. The semiconductor device according to claim 2,

wherein said power generator is a variable capacitor formed in an MEMS (Micro Electro Mechanical System) process.

7. The semiconductor device according to claim 2,

wherein said power generator generates electric power from vibration.

8. The semiconductor device according to claim 2,

wherein said power generator generates electric power from light energy.

9. The semiconductor device according to claim 2,

wherein said power generator generates electric power from a temperature difference.

10. The semiconductor device according to claim 2,

wherein said power generator is a button battery.

11. The semiconductor device according to claim 2,

wherein said power generator comprises an electric generator and a battery.

12. The semiconductor device according to claim 2,

wherein said sensor is a temperature sensor;

and

wherein said semiconductor device has a diode used as said temperature sensor.

13. The semiconductor device according to claim 2,

wherein said sensor is an acceleration sensor;

and

wherein said acceleration sensor is formed in said MEMS process.

14. The semiconductor device according to claim 2,

wherein said sensor is an optical sensor;

and

wherein said optical sensor is covered by a material that transmits red or infrared rays.

15. The semiconductor device according to claim 2,

wherein said memory stores a specific ID number.

16. The semiconductor device according to claim 2,

wherein said semiconductor device has a seal;

and

wherein said seal is configured so as to be stuck on an object to be detected.

17. A semiconductor device, comprising:

a sensor chip that includes a temperature sensor, an acceleration sensor, and a red/infrared ray sensor;

an A/D conversion circuit for amplifying a signal received from said sensor chip and for converting said signal to a digital value;

a microprocessor for taking out information from said sensor chip to process said information;

a memory for storing a program code of said microprocessor and said information received from said sensor chip;

a transmission circuit controlled by said microprocessor and used to transmit data to the outside;

a power supply control circuit for controlling whether to supply electric power to said sensor unit, said A/D conversion circuit, said microprocessor, said memory, and said transmission circuit, respectively; and

a power collection circuit for collecting an increase of electrostatic energy of a variable capacitor generated by mechanical vibration to convert said increase to electrical energy,

wherein said sensor chip, said A/D conversion circuit, said microprocessor, said memory, said transmission/receiving circuit, and said power supply control circuit are formed on one side of a semiconductor substrate.