Seed layers for metallic interconnects

DC
  • US 7,199,052 B2
  • Filed: 02/14/2005
  • Issued: 04/03/2007
  • Est. Priority Date: 10/02/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A method for making metallic interconnects, which method is utilized at a stage of processing a substrate having a patterned insulating layer which includes at least one opening and a field surrounding the at least one opening, the field and the at least one opening being ready for depositing one or more seed layers, said method comprising:

  • physical vapor depositing a first seed layer over the field and inside surfaces of the at least one opening, wherein said first seed layer is thicker than about 250 Å

    over the field;

    chemical vapor depositing a second seed layer over the first seed layer, wherein the first seed layer is thicker than the second seed layer over the field; and

    filling the at least one opening by electroplating a metallic layer comprising copper or a copper alloy over the second seed layer.

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