Versatile method and system for single mode VCSELs

• US 7,221,691 B2
• Filed: 07/10/2003
• Issued: 05/22/2007
• Est. Priority Date: 11/28/2000
• Status: Expired due to Term

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Johnson, Ralph H., Morales, Gilberto
• Primary Examiner(s): MENEFEE, JAMES A
• Application Number:
  US10/617,290
• Publication Number:
  US 20040066819A1
• Time in Patent Office: 1,412 Days
• Field of Search: 372/45.01, 372/46.013, 372/46.015, 372/99
• US Class Current: 372/45.01
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18316 Airgap confined
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
• CPC Class Codes: H01S 5/18391 Aperiodic structuring to influence the near- or far-field distribution
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment

Abstract

A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser). A lower mirror is formed on a substrate. An active region including one or more quantum wells is formed over the lower mirror. The upper mirror formed over the active region can include multiple layers and may be formed to be have substantially isotropic conductivity. The layers in the upper mirror can include a lightly doped DBR layer, a heavily doped second layer including an isolation region, and a third heavily doped DBR layer. The active region may include conduction layers, which may be periodically doped, to improve conductivity and reduce free carrier absorption.

Claims

1. An optoelectronic device, comprising:

a first mirror;

a second mirror;

one or more heat conduction layers formed between the first mirror and the second mirror, at least one of the heat conduction layers being periodically doped to maximize doping at minima of electric fields in the optoelectronic device;

an active region situated between the first mirror and the second mirror;

an insulating layer positioned in or adjacent to the first mirror, the insulating layer defining an aperture; and

an isolation implant region extending around, and spaced outwardly from, at least part of the aperture of the insulating layer and traversing through the insulating layer and at least part of the first mirror.

2. An optoelectronic device according to claim 1 wherein the isolation implant region also traverses through the active region.

3. An optoelectronic device according to claim 2 wherein the isolation implant region traversed through the active region and at least partially into the second mirror.

4. An optoelectronic device according to claim 1 wherein the isolation implant region extends entirely around the perimeter of the aperture of the insulating layer.

5. An optoelectronic device according to claim 1 wherein the isolation implant region defines an aperture that is larger than the aperture of the insulating layer.

6. An optoelectronic device according to claim 5 wherein the aperture of the isolation implant region is substantially coaxial with the aperture of the insulating layer.

7. An optoelectronic device according to claim 1, wherein the first mirror comprises:

a first DBR layer that has substantially isotropic conductivity;

a second DBR layer including the insulating layer, the second DBR layer having a doping level to minimize series resistance and heating effects in the aperture; and

a third DBR layer formed over the second DBR layer.

8. An optoelectronic device according to claim 1 wherein the optoelectronic device is a Vertical Cavity Surface Emitting Laser (VCSEL).

9. A method for forming an optoelectronic device, the method comprising the steps of:

providing a lower mirror;

providing an active region above the lower mirror;

providing a first DBR layer in an upper mirror above the active region, the first DBR layer having a first doping level;

providing a second DBR layer in the upper mirror, the second DBR layer including an insulating layer that defines an aperture, the second DBR layer further having a second doping level that is higher than the first doping level;

providing an isolation implant in an implant region, wherein the implant region extends around, and is spaced outwardly from, at least part of the aperture of the insulating layer and traverses down through at least part of the upper mirror and through the insulating layer;

providing a third DBR layer formed above the second DBR layer; and

providing one or more conduction layers formed between the lower mirror and the upper mirror, the one or more conduction layers being periodically doped such that heavy doping occurs at nulls of an electric field in the optoelectronic device.

10. An optoelectronic device A method according to claim 9 wherein the isolation implant region traverses through the active region.

11. A method according to claim 10 wherein the isolation implant region traverses through the active region and at least partially into the lower mirror.

12. A method according to claim 9 wherein the isolation implant region extends entirely around the perimeter of the aperture of the insulating layer.

13. A method according to claim 9 wherein the isolation implant region defines an aperture that is larger than the aperture of the insulating layer.

14. A method according to claim 13 wherein the aperture of the isolation implant region is substantially coaxial with the aperture of the insulating layer.

15. A method according to claim 9 wherein the isolation implant region is implanted with protons.

16. A method according to claim 9

wherein the optoelectronic device is a Vertical Cavity Surface Emitting Laser (VCSEL).