Apparatus and method for adjusting the substrate impedance of a MOS transistor
First Claim
1. A method for adjusting an impedance of a substrate of a Metal-Oxide-Semiconductor transistor, said method comprising:
- a) providing a bias voltage fixed at a predetermined value;
b) connecting a frequency-selective circuit between said substrate and said bias voltage;
c) providing said frequency-selective circuit with at least one reactive element comprising at least one inductive element connected directly between said substrate and said bias voltage, to obtain a predetermined frequency-response of said frequency-selective circuit, thereby adjusting said impedance.
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Abstract
Method and apparatus for adjusting an impedance of a substrate of a Metal-Oxide-Semiconductor (MOS) transistor by providing a bias voltage and connecting a frequency-selective circuit between the substrate and the bias voltage. The frequency-selective circuit is also provided with at least one reactive element, such as an inductive element or a capacitive element, to obtain a certain frequency-response of the frequency-selective circuit and thus adjusts the substrate impedance of the MOS transistor. The method and apparatus are compatible with standard CMOS technology and applicable to RF switches, including T/R switches for processing high-frequency analog signals.
40 Citations
19 Claims
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1. A method for adjusting an impedance of a substrate of a Metal-Oxide-Semiconductor transistor, said method comprising:
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a) providing a bias voltage fixed at a predetermined value; b) connecting a frequency-selective circuit between said substrate and said bias voltage; c) providing said frequency-selective circuit with at least one reactive element comprising at least one inductive element connected directly between said substrate and said bias voltage, to obtain a predetermined frequency-response of said frequency-selective circuit, thereby adjusting said impedance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An apparatus for adjusting an impedance of a substrate of a Metal-Oxide-Semiconductor transistor, said apparatus comprising:
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a) a fixed bias voltage source; b) a frequency-selective circuit connected between said substrate and said fixed bias voltage source; c) at least one reactive element in said frequency-selective circuit, said at least one reactive element comprising at least one inductive element connected directly between said substrate and said fixed bias voltage for defining a predetermined frequency-response of said frequency-selective circuit, thereby adjusting said impedance. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification