Semiconductor device and display element using semiconductor device

• US 7,242,021 B2
• Filed: 04/22/2003
• Issued: 07/10/2007
• Est. Priority Date: 04/23/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Monoe, Shigeharu, Murakami, Satoshi, Yamazaki, Shunpei
• Primary Examiner(s): Pert; Evan
• Assistant Examiner(s): Erdem; Fazli
• Application Number:
  US10/419,764
• Publication Number:
  US 20030197178A1
• Time in Patent Office: 1,540 Days
• Field of Search: 257/347, 257/620, 257/636, 257/59, 257/60, 257/66, 257/310, 257/326, 257/350, 257/72, 257/89, 257/90, 257/73, 257/351, 349/143, 438/782, 438/624, 438/169, 438/156, 438/151, 369/43, 369/44, 369/45
• US Class Current: 257/59
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

The present invention achieves the enhancement of stability of operational performance of a display device and the enlargement of margin of design in circuit designing. In a semiconductor device including a semiconductor, a gate insulation film which is brought into contact with the semiconductor, a gate electrode which faces an active layer by way of the gate insulation film, a first inorganic insulation film which is formed above the active layer, an SOG film which is formed on the first inorganic insulation film, and a second inorganic insulation film which is formed on the SOG film, and wiring which is formed on the second inorganic insulation film, an inner wall surface of a first opening portion formed in the SOG film is covered with the second inorganic insulation film and, at the same time, a second opening portion which is formed in a laminated body including the gate insulation film, the first inorganic insulation film and the second inorganic insulation film is provided to the inside of the first opening portion, and the semiconductor and the wiring are connected to each other through the first opening portion and the second opening portion.

Claims

1. A semiconductor device comprising:

an active layer;

a gate insulating film over the active layer;

a gate electrode over the active layer with the gate insulating film interposed therebetween;

a first inorganic insulating film formed over the active layer;

an SOG film formed over the first inorganic insulating film, said SOG film having a first opening;

a second inorganic insulating film formed over the SOG film; and

a wiring formed over the second inorganic insulating film;

wherein an inner wall surface of the first opening is covered with the second inorganic insulating film,

wherein said SOG film comprises silicon oxide,

wherein a second opening formed in a laminated body including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening, and

wherein the active layer and the wiring are connected to each other through the first opening and the second opening.

3. A semiconductor device according to claim 1, wherein the first inorganic insulating film and the second inorganic insulating film are formed of a film selected from a group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxide nitride film, an aluminum nitride film, an aluminum nitride oxide film or an aluminum oxide nitride film.

9. An electronic device having the semiconductor device according to claim 1, wherein said electronic device is selected from the group consisting of a television, a digital camera, a laptop computer, a mobile computer, a portable image reproducing apparatus, a goggle type display, a video camera and a cellular phone.

17. The semiconductor device according to claim 1, wherein said SOG film comprising the following structure:

2. A semiconductor device comprising:

an active layer;

a gate insulating film over the active layer;

a gate electrode over the active layer with the gate insulating film interposed therebetween;

a first inorganic insulating film formed over the active layer;

an SOG film formed over the first inorganic insulating film, said SOG film having a first opening;

a second inorganic insulating film formed over the SOG film; and

a wiring formed over the second inorganic insulating film,

wherein an inner wall surface of the first opening is covered with the second inorganic insulating film,

wherein said SOG film comprises silicon oxide,

wherein a region where the first inorganic insulating film and the second inorganic insulating film are brought into contact with each other by 0.3 to 3 μ

m in width is provided to a bottom surface of the first opening,

wherein a second opening formed in a laminated film including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening, and

wherein the active layer and the wiring are connected to each other through the first opening and the second opening.

4. A semiconductor device according to claim 2, wherein the first inorganic insulating film and the second inorganic insulating film are formed of a film selected from a group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxide nitride film, an aluminum nitride film, an aluminum nitride oxide film or an aluminum oxide nitride film.

10. An electronic device having the semiconductor device according to claim 2, wherein said electronic device is selected from the group consisting of a television, a digital camera, a laptop computer, a mobile computer, a portable image reproducing apparatus, a goggle type display, a video camera and a cellular phone.

18. The semiconductor device according to claim 2, wherein said SOG film comprising the following structure:

5. A display device comprising a pixel portion over a substrate, the pixel portion including a plurality of pixels each comprising a semiconductor device and a holding capacitance which is connected to the semiconductor device, the semiconductor device comprising:

an active layer;

a gate insulating film over the active layer;

a gate electrode over the active layer with the gate insulating film interposed therebetween;

a first inorganic insulating film formed over the active layer;

an SOG film formed over the first inorganic insulating film, said SOG film having a first opening;

a second inorganic insulating film formed over the SOG film; and

a wiring formed over the second inorganic insulating film,

wherein an inner wall surface of the first opening is covered with the second inorganic insulating film,

wherein said SOG film comprises silicon oxide,

wherein a second opening formed in a laminated body including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening,

wherein the active layer and the wiring are connected to each other through the first opening and the second opening, end

wherein the holding capacitance includes the first inorganic insulating film and the second insulating film as dielectrics.

7. A display device according to claim 5,

wherein the first inorganic insulating film and the second inorganic insulating film are formed of a film selected from a group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxide nitride film, an aluminum nitride film, an aluminum nitride oxide film or an aluminum oxide nitride film.

11. An electronic device having the display device according to claim 5, wherein said electronic device is selected from the group consisting of a television, a digital camera, a laptop computer, a mobile computer, a portable image reproducing apparatus, a goggle type display, a video camera and a cellular phone.

19. The display device according to claim 5, wherein said SOG film comprising the following structure:

6. A display device comprising a pixel portion over a substrate, the pixel portion including a plurality of pixels each comprising a semiconductor device and a holding capacitance connected to semiconductor device, the semiconductor device comprising:

an active layer;

a gate insulating film over the active layer;

a gate electrode over the active layer with the gate insulating film interposed therebetween;

a first inorganic insulating film formed over the active layer;

an SOG film formed over the first inorganic insulating film, said SOG film having a first opening;

a second inorganic insulating film formed over the SOG film; and

a wiring formed over the second inorganic insulating film,

wherein an inner wall surface of the first opening is covered with the second inorganic insulating film,

wherein said SOG film comprises silicon oxide,

wherein a region where the first inorganic insulating film and the second insulating film are brought into contact with each other with a contact length of 0.3 to 3 μ

m in width is provided to a bottom surface of the first opening,

wherein a second opening formed in a laminated body including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening,

wherein the active layer and the wiring are connected to each other through the first opening and the second opening, and

wherein the holding capacitance includes the first inorganic insulating film and the second insulating film as dielectrics.

8. A display device according to claim 6,

wherein the first inorganic insulating film and the second inorganic insulating film are formed of a film selected from a group consisting of a silicon nitride film, a silicon nitride oxide film, a silicon oxide nitride film, an aluminum nitride film, an aluminum nitride oxide film or an aluminum oxide nitride film.

12. An electronic device having the display device according to claim 6, wherein said electronic device is selected from the group consisting of a television, a digital camera, a laptop computer, a mobile computer, a portable image reproducing apparatus, a goggle type display, a video camera and a cellular phone.

20. The display device according to claim 6, wherein said SOG film comprising the following structure:

13. A semiconductor device comprising:

an active layer;

a gate insulating film over the active layer;

a gate electrode over the active layer with the gate insulating film interposed therebetween;

a first inorganic insulating film formed over the active layer;

a film comprising silicon oxide formed by applying solution containing a thin film forming material over the first inorganic insulating film, said film having a first opening;

a second inorganic insulating film formed over said film having said first opening; and

a wiring formed over the second inorganic insulating film;

wherein an inner wall surface of the first opening is covered with the second inorganic insulating film;

wherein a second opening formed in a laminated body including the gate insulating film, the first inorganic insulating film and the second inorganic insulating film is provided to the inside of the first opening; and

wherein the active layer and the wiring are connected to each other through the first opening and the second opening.

14. A semiconductor device according to claim 13,

wherein a region where the first inorganic insulating film and the second insulating film are brought into contact with each other with a contact length of 0.3 to 3 μ

m in width is provided to a bottom surface of the first opening.

15. A semiconductor device according to claim 13,

wherein the film comprising silicon oxide formed by applying solution containing said thin film forming material is selected from the group consisting of an SiOx film, a phosphorus silicate glass film, a boron silicate glass film and a boron phosphorus silicate glass film.

16. An electronic device having the semiconductor device according to claim 13,

wherein said electronic device is selected from the group consisting of a television, a digital camera, a laptop computer, a mobile computer, a portable image reproducing apparatus, a goggle type display, a video camera and a cellular phone.

21. The semiconductor device according to claim 13, wherein said SOG film comprising the following structure: