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Semiconductor integrated device

  • US 7,244,991 B2
  • Filed: 03/30/2005
  • Issued: 07/17/2007
  • Est. Priority Date: 08/31/2004
  • Status: Expired due to Fees
First Claim
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1. A semiconductor integrated apparatus, comprising:

  • an SOI (Silicon On Insulator) substrate which has a p type of support substrate and an embedded insulation film;

    an NMOSFET, a PMOSFET and an FBC (Floating Body Cell) formed on the SOI substrate separately from each other;

    a p type of first well diffusion region formed along the embedded insulation film in the support substrate below the NMOSFET;

    an n type of second well diffusion region formed along the embedded insulation film in the support substrate below the PMOSFET; and

    a p type of third well diffusion region formed along the embedded insulation film in the support substrate below the FBC.

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