Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices

• US 7,256,139 B2
• Filed: 01/28/2005
• Issued: 08/14/2007
• Est. Priority Date: 05/08/2002
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Zhao, Jun, Demos, Alexandros T., Weidman, Timothy, Roberts, Rick J., Moghadam, Farhad, Xia, Li-Quan
• Primary Examiner(s): Kebede; Brook
• Assistant Examiner(s): Nguyen; Khiem D
• Application Number:
  US11/045,650
• Publication Number:
  US 20050130404A1
• Time in Patent Office: 928 Days
• Field of Search: 438/623, 438/758, 438/778, 438/789, 438/781, 438/784, 427/255.28, 427/551
• US Class Current: 438/758
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 3/068 using ionising radiations (gamma, X, electrons)
• CPC Class Codes: B05D 3/141 Plasma treatment
• CPC Class Codes: B05D 5/08 to obtain an anti-friction or anti-adhesive surface rendering particulate materials free-flowing in general, e.g. making them hydrophobic B01J2/30
• CPC Class Codes: B05D 5/12 to obtain a coating with specific electrical properties
• CPC Class Codes: C08G 77/50 by carbon linkages C08G77/485 takes precedence
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/0206 during, before or after processing of insulating layers
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02129 the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02351 treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
• CPC Class Codes: H01L 21/0276 : using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/0277 : Electrolithographic processes
• CPC Class Codes: H01L 21/0337 : characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/3105 : After-treatment
• CPC Class Codes: H01L 21/31058 : of organic layers
• CPC Class Codes: H01L 21/3121 : Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/3122 : layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3125 : layers comprising silazane compounds
• CPC Class Codes: H01L 21/3146 : Carbon layers, e.g. diamond-like layers
• CPC Class Codes: H01L 21/3148 : Silicon Carbide layers
• CPC Class Codes: H01L 21/316 : composed of oxides or glassy oxides or oxide based glass
• CPC Class Codes: H01L 21/31625 : Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
• CPC Class Codes: H01L 21/31633 : Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/76807 : for dual damascene structures
• CPC Class Codes: H01L 21/76814 : post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76825 : by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76829 : characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

Abstract

One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.

Claims

1. A method of depositing a low dielectric constant film, comprising:

chemical vapor depositing a low dielectric constant film comprising metastable groups using a silicon-containing precursor comprising a methyl group bonded to silicon and an alkoxy group bonded to silicon and one or more hydrocarbon precursors selected from the group consisting of norbornadiene and butadiene; and

treating the low dielectric constant film to eject the metastable groups.

2. The method of claim 1, wherein the silicon-containing precursor comprises two alkoxy groups bonded to silicon.

3. The method of claim 2, wherein the alkoxy groups are ethoxy groups.

4. The method of claim 2, wherein the alkoxy groups are methoxy groups.

5. The method of claim 2, wherein the silicon-containing precursor is diethoxymethylsilane.

6. The method of claim 2, wherein the silicon-containing precursor is dimethoxydimethylsilane.

7. The method of claim 1, wherein treating the low dielectric constant film comprises electron beam treating the low dielectric constant film.

8. The method of claim 7, wherein treating the low dielectric constant film further comprises thermally annealing the low dielectric constant film.

9. The method of claim 8, wherein treating the low dielectric constant film further comprises plasma treating the low dielectric constant film.

10. The method of claim 7, wherein treating the low dielectric constant film further comprises plasma treating the low dielectric constant film.

11. A method of depositing a low dielectric constant film, comprising:

chemical vapor depositing a low dielectric constant film comprising metastable groups using a silicon-containing precursor comprising a methyl group bonded to silicon, two alkoxy groups bonded to silicon, and H bonded to silicon and one or more hydrocarbon precursors selected from the group consisting of norbornadiene and butadiene; and

treating the low dielectric constant film to eject the metastable groups.

12. The method of claim 11, wherein the alkoxy groups are ethoxy groups.

13. The method of claim 11, wherein the alkoxy groups are methoxy groups.

14. The method of claim 11, wherein the alkoxy groups are singly bonded to silicon.

15. The method of claim 11, wherein the silicon-containing precursor is diethoxymethylsilane and the one or more hydrocarbon precursors is norbornadiene.

16. The method of claim 11, wherein treating the low dielectric constant film comprises electron beam treating the low dielectric constant film.

17. A method of depositing a low dielectric constant film, comprising:

chemical vapor depositing a low dielectric constant film comprising metastable groups using diethoxymethylsilane and norbornadiene as precursors; and

electron beam treating the low dielectric constant film to eject the metastable groups.

18. The method of claim 17, further comprising annealing the low dielectric constant film.

19. The method of claim 17, further comprising plasma treating the low dielectric constant film.