Vacuum thermal annealer

• US 7,256,370 B2
• Filed: 08/05/2002
• Issued: 08/14/2007
• Est. Priority Date: 03/15/2002
• Status: Expired due to Fees

• Current Assignee: Steel Technologies LLC (Mitsui & Company Limited)
• Original Assignee: Steel Technologies LLC (Mitsui & Company Limited)
• Inventors: Guiver, Harold Chris
• Primary Examiner(s): Fuqua; Shawntina T.
• Application Number:
  US10/212,898
• Publication Number:
  US 20030173347A1
• Time in Patent Office: 1,835 Days
• Field of Search: 219/390, 219/405, 219/411, 118/724, 118/725, 118/50.1, 118/728, 118/729, 118/730, 392/416, 392/418
• US Class Current: 219/390
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A vacuum thermal annealing device is provided having a temperature control for use with various materials, such as semiconductor substrates. A vacuum is used to remove air and outgas residual materials. Heated gas is injected planar to a substrate as pressure is quickly raised. Concurrent with the heated gas flow, a chamber wall heater is turned on and maintains a temperature for a proper annealing time. Upon completion of the annealing process, the chamber wall heater shuts down and air is forced around the chamber wall heater. Additionally, cool gas replaces the heated gas to cool the substrate.

Claims

1. A vacuum thermal processing system, comprising:

a processing chamber;

a heater coupled to the process chamber;

a gas distribution system coupled to the process chamber;

a gas heater system coupled between the gas distribution system and the process chamber;

a programmable exhaust valve for maintaining a pressure within the process chamber;

a vacuum flange coupled to the process chamber, the vacuum flange designed to be coupled to a pumping system for creating a vacuum within the process chamber;

at least one rotatable substrate holder contained within the process chamber configured to hold at least one substrate for each of the at least one substrate holder; and

a gas injector system contained vithin the process chamber, the gas injector system configured in a way so as to flow super-heated and super-cooled gas in an essentially planar fashion to a face surface of the substrate.

2. A system for annealing a substrate, comprising:

means for creating a vacuum in a process chamber;

means for uniformly and rapidly heating the substrate to a set-point temperature with at least one heated gas;

means for maintaining the set-point temperature for a desired amount of time; and

upon expiration of the desired amount at time, means for rapidly cooling the substrate.

3. A vacuum thermal processing system, comprising:

a processing chamber coupled to a gas distribution system and a gas heater system;

a vacuum flange coupled to the process chamber, the vacuum flange designed to be coupled to a pumping system;

at least one substrate holder contained within the process chamber configured to hold at least one substrate for each of the at least one substrate holder;

a heater coupled to the process chamber, the heater configured to heat any substrate present on the at least one substrate holder, the heater further configured to heat at least one wall of the process chamber; and

a gas injector system contained within the process chamber, the gas injector system configured in a way so as to flow gas in an essentially planar fashion to a face surface of the substrate,

wherein a plurality of process chambers may be coupled together while designed to be coupled to a common gas heating system and further designed to be coupled to a common pumping system.

4. A vacuum thermal processing system, comprising:

a processing chamber coupled to a gas distribution system and a gas heater system;

a vacuum flange coupled to the process chamber, the vacuum flanqe designed to be coupled to a pumping system;

at least one substrate holder contained within the process chamber configured to hold at least one substrate for each of the at least one substrate holder;

a heater coupled to the process chamber, the heater configured to heat any substrate present on the at least one substrate holder, the heater further configured to heat at least one wall of the process chamber; and

a gas injector system contained within the process chamber, the gas injector system configured in a way so as to flow gas in an essentially planar fashion to a face surface of the substrate, the vacuum thermal processing system used for annealing substrates.

5. A vacuum thermal processing system, comprising:

a processing chamber coupled to a gas distribution system and a gas heater system;

a vacuum flange coupled to the process chamber, the vacuum flange designed to be coupled to a pumping system;

at least one substrate holder contained within the process chamber configured to hold at least one substrate for each of the at least one substrate holder;

a heater coupled to the process chamber, the heater configured to heat any substrate present on the at least one substrate holder, the heater further configured to heat at least one wall of the process chamber; and

a gas injector system contained within the process chamber, the gas injector system configured in a way so as to flow gas in an essentially planar fashion to a face surface of the substrate, the gas injector system containing a plurality of orifices.

6. The vacuum thermal processing system of claim 5, wherein the orifices have an aspect ratio of between 4:

1 and 10;

1 as compared with a distance between a wall of the gas injector and the substrate, and a diameter of the orifice.