Semiconductor apparatus

• US 7,256,489 B2
• Filed: 11/02/2004
• Issued: 08/14/2007
• Est. Priority Date: 11/04/2003
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toyota Jidoshokki
• Original Assignee: Kabushiki Kaisha Toyota Jidoshokki
• Inventors: Ishikawa, Jun, Nagase, Toshiaki, Akagawa, Koichi, Onishi, Hiroyuki
• Primary Examiner(s): Tran; Minhloan
• Assistant Examiner(s): Cruz; Leslie Pilar
• Application Number:
  US10/979,563
• Publication Number:
  US 20050093137A1
• Time in Patent Office: 1,015 Days
• Field of Search: None
• US Class Current: 257/696
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]

Abstract

In a semiconductor apparatus in which a main current of a semiconductor device flows through a wiring pattern formed on an insulation circuit board, the rise in temperature of the wiring pattern is suppressed and the increase in cost of parts can be minimized. On the insulation circuit board, a copper pattern is formed. A heat spreader is soldered to the copper pattern, and the heat spreader is loaded with a semiconductor chip. An external electrode and the heat spreader are arranged to shorten the distance between the side of the external electrode and the side of the heat spreader.

Claims

1. A semiconductor apparatus, comprising:

an insulation board;

a conductive wiring pattern, formed on the insulation board, for electrically connecting device units formed thereon;

a radiation member formed on a first portion of the conductive wiring pattern;

a semiconductor device formed on the radiation member; and

a metal conductor formed on a second portion of the conductive wiring pattern separated from the first portion thereby forming a space between the edge of the radiation member and the edge of the metal conductor,

wherein a conductive material is disposed between the radiation member and the metal conductor, thereby reducing resistance of the conductive wiring pattern between the radiation member and the metal conductor, and

wherein said conductive material is solder.

2. A semiconductor apparatus, comprising:

an insulation board;

a conductive wiring pattern, formed on the insulation board, for electrically connecting device units formed thereon;

a radiation member formed on a first portion of the conductive wiring pattern;

a semiconductor device formed on the radiation member;

a first metal conductor formed on a second portion of the conductive wiring pattern separated from the first portion thereby forming a space between the edge of the radiation member and the edge of the metal conductor; and

a second metal conductor formed on the first metal conductor via an insulation layer,

wherein the first metal conductor is protruded toward the space beyond the boundary of the second metal conductor and, thereby reducing resistance of the conductive wiring pattern between the radiation member and the first metal conductor.

3. The apparatus according to claim 2, wherein:

the second metal conductor is connected to said semiconductor device by wire bonding; and

the first metal conductor is electrically connected to said radiation member by the conductive wiring pattern.