Methods for transferring a useful layer of silicon carbide to a receiving substrate
First Claim
1. A method for recycling a SiC source substrate, which comprises:
- implanting at least H+ ions through a front face of a source substrate of silicon carbide with a selected combination of an implantation energy E and an implantation dose D of H+ ions sufficient to form an optimal weakened zone, with the optimal weakened zone defining a useful layer comprising silicon carbide and a reminder portion of the source substrate;
bonding the front face of the source substrate to a contact face of a receiving substrate;
detaching the useful layer from the remainder portion of the source substrate along the weakened zone, the detaching comprising applying a thermal budget, andremoving an excess zone by exfoliation;
wherein the optimal weakened zone produced by the selected combination of implantation energy and dose is sufficient to cause exfoliation of at least about 80% of the peripheral excess zone of silicon carbide to facilitate recycling of the remainder portion of the source substrate by minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment.
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Abstract
Methods for transferring a useful layer of silicon carbide to a receiving substrate are described. In an embodiment, the invention relates to a method for recycling of a silicon carbide source substrate by removal of the excess zone followed by a finishing step to prepare the source substrate for recycling and reuse. Preferably, the excess zone is removed by a thermal budget where the temperature and time of such treatment causes exfoliation of the excess zone. The finishing step is performed in a manner to provide the desired surface roughness for the substrate so that it can be recycled for re-use. The technique includes implanting at least H+ ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D chosen to form an optimal weakened zone near a mean implantation depth, the optimal weakened zone defining the useful layer and a remainder portion of the source substrate. The method also includes bonding the front face of the source substrate to a contact face of the receiving substrate, and detaching the useful layer from the remainder portion of the source substrate along the weakened zone while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment.
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Citations
27 Claims
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1. A method for recycling a SiC source substrate, which comprises:
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implanting at least H+ ions through a front face of a source substrate of silicon carbide with a selected combination of an implantation energy E and an implantation dose D of H+ ions sufficient to form an optimal weakened zone, with the optimal weakened zone defining a useful layer comprising silicon carbide and a reminder portion of the source substrate; bonding the front face of the source substrate to a contact face of a receiving substrate; detaching the useful layer from the remainder portion of the source substrate along the weakened zone, the detaching comprising applying a thermal budget, and removing an excess zone by exfoliation; wherein the optimal weakened zone produced by the selected combination of implantation energy and dose is sufficient to cause exfoliation of at least about 80% of the peripheral excess zone of silicon carbide to facilitate recycling of the remainder portion of the source substrate by minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment. - View Dependent Claims (2, 3, 5, 6, 7, 8, 9, 10, 11, 12, 16, 17, 20, 21, 23, 24, 25, 26, 27)
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4. A method for recycling a SiC source substrate, which comprises:
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implanting at least H30 ions through a front face of a source substrate of silicon carbide with a selected combination of an implantation energy E and an implantation dose D of H+ ions sufficient to form an optimal weakened zone, with the optimal weakened zone defining a useful layer comprising silicon carbide and a remainder portion of the source substrate, and with the implanting conducted while maintaining the source substrate at a temperature that is no greater than 200°
C.;bonding the front face of the source substrate to a contact face of a receiving substrate;
detaching the useful layer from the remainder portion of the source substrate along the weakened zone, the detaching comprising applying a thermal budget,removing an excess zone by exfoliation; and wherein the optimal weakened zone produced by the selected combination of implantation energy and dose facilitates recycling the remainder portion of the source substrate by minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment.
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13. The method for fecycling a Sic source subsrate, which comprises:
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implanting at least H+ ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D of H+ ions sufficient to form an optimal weakened zone near a mean implantation depth, with the optimal weakened zone defining a useful layer and a remainder portion of the source substrate; providing an intermediate bonding layer comprising an amorphous material on at least one of the front face of the source substrate and a contact face of a receiving substrate; bonding the front face of the source substrate to a contact face of the receiving substrate, wherein the bonding step comprises moleculary adhering the receiving substrate to the front face of the source substrate; detaching the useful layer from the remainder portion of the source substrate along the weakened zone while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment, to thus facilitate recycling the remainder portion of the source substrate; applying a thermal budget that is appropriate to remove the excess zone from the surface of the remainder portion of the source substrate, and eliminating source substrate surface roughness via a finishing step to prepare the source substrate for recycling and reuse. - View Dependent Claims (14, 15)
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18. A method for recycling a SiC source substrate, which comprises:
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implanting at least H+ ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D of H+ ions sufficient to form an optimal weakened zone near a mean implantation depth, with the optimal weakened zone defining a useful layer and a remainder portion of the source substrate; bonding the front face of the source substrate to a contact face of a receiving substrate; detaching the useful layer from the remainder portion of the source substrate along the weakened zone by heating the source substrate/receiving substrate assembly to a temperature of above 700°
C. until the useful layer detaches while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment, to thus facilitate recycling the remainder portion of the source substrate; andapplying a thermal budget that is appropriate to remove the excess zone from the surface of the remainder portion of the source substrate, eliminating source substrate surface roughness via a finishing step to prepare the source substrate for recycling and reuse. - View Dependent Claims (19)
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22. A method for recycling a SiC source substrate, which comprises:
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implanting at least H+ ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D of H+ ions sufficient to form an optimal weakened zone near a mean implantation depth, with the optimal weakened zone defining a useful layer and a remainder portion of the source substrate; bonding the front face of the source substrate to a contact face of a receiving substrate; detaching the useful layer which comprises monocrystalline silicon carbide 4H—
SiC material from the remainder portion of the source substrate along the weakened zone while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment, to thus facilitate recycling the remainder portion of the source substrate; andapplying a thermal budget that is appropriate to remove the excess zone from the surface of the remainder portion of the source substrate, eliminating source substrate surface roughness via a finishing step to prepare the source substrate for recycling and reuse.
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Specification