Radiation source and method for producing a lens mould

• US 7,262,437 B2
• Filed: 07/30/2001
• Issued: 08/28/2007
• Est. Priority Date: 08/04/2000
• Status: Expired due to Fees

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Bogner, Georg, Spath, Werner, Waitl, Gu, Gramann, Wolfgang, Marchl, Werner, Kromotis, Patrick
• Primary Examiner(s): Cao; Phat X.
• Application Number:
  US10/343,819
• Publication Number:
  US 20040026706A1
• Time in Patent Office: 2,220 Days
• Field of Search: 257/95, 257/88, 257/79, 257/89, 257/98, 257/E33.068
• US Class Current: 257/95
• CPC Class Codes: B29D 11/00278 Lenticular sheets B29D11/00269 takes precedence
• CPC Class Codes: B29D 11/00365 Production of microlenses lenticular sheets B29D11/00278
• CPC Class Codes: F21V 5/04 of lens shape
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: G02B 3/0031 Replication or moulding, e.g. hot embossing, UV-casting, injection moulding
• CPC Class Codes: G02B 3/0056 arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses G02B3/0043 takes precedence; miniaturised objectives for electronic devices employing wafer level optics G02B13/0085
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/1815 Shape
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/19107 off-chip wires

Abstract

A radiation source has a field of semiconductor chips, which are disposed below a field of micro-lenses (8) disposed in a hexagonal lattice structure. The radiation source is distinguished by high radiation output and radiation density.

Claims

1. A radiation source with many radiation-emitting semiconductor chips disposed side by side, wherein

a field of integrally formed lenses, forming a hexagonal lattice, is disposed upstream, in the projection direction, of the semiconductor chips, and

wherein color groups of the semiconductor chips are disposed in respective lines such that all the semiconductor chips in any given line are of an identical color group, with the color groups having their respective maximum emissions at different wavelengths.

2. The radiation source of claim 1, wherein the lenses are formed by half spheres.

3. The radiation source of claim 1, wherein the lenses are disposed in the hexagonally densest lattice.

4. The radiation source of claim 1, wherein the outline of the lattice has a hexagonal shape.

5. The radiation source of claim 1, wherein the semiconductor chips are bonded by line.

6. The radiation source of claim 1, wherein the field of lenses is integrally formed with a casting resin for the semiconductor chips.

7. A radiation source with many radiation-emitting semiconductor chips disposed side by side, wherein

a field of integrally formed lenses, forming a hexagonal lattice, is disposed upstream, in the projection direction, of the semiconductor chips, and

wherein color groups of the semiconductor chips are disposed in respective lines, with the color groups having their respective maximum emissions at different wavelengths, and the semiconductor chips of the radiation source are mounted directly on a shared circuit board.

8. The radiation source of claim 7, wherein the lenses are formed by half spheres.

9. The radiation source of claim 7, wherein the lenses are disposed in the hexagonally densest lattice.

10. The radiation source of claim 7, wherein the outline of the lattice has a hexagonal shape.

11. The radiation source of claim 7, wherein the semiconductor chips are bonded by line.

12. The radiation source of claim 7, wherein the field of lenses is integrally formed with a casting resin for the semiconductor chips.