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Electric component for communication device and semiconductor device for switching transmission and reception

  • US 7,269,392 B2
  • Filed: 08/19/2004
  • Issued: 09/11/2007
  • Est. Priority Date: 08/27/2003
  • Status: Active Grant
First Claim
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1. An electronic component for communication, comprising:

  • a first power amplification circuit for amplifying an RF signal in a first frequency band to be transmitted;

    a second power amplification circuit for amplifying an RF signal in a second frequency band to be transmitted;

    a first terminal connected to a transmission/reception antenna;

    a second terminal connected to a first reception circuit for processing a received RF signal in the first frequency band;

    a third terminal connected to a second reception circuit for processing a received RF signal in the second frequency band;

    a first switch circuit provided between said first terminal and said first power amplification circuit and between said first and second terminals; and

    a second switch circuit provided between said first terminal and said second power amplification circuit and between said first and third terminals,wherein a transistor constituting said first switch circuit and a transistor constituting said second switch circuit have respective characteristics different from each other such that an insertion loss of the first switch circuit and an insertion loss of the second switch circuit are balanced,wherein said first switch circuit includes first switching means provided between said first terminal and the first power amplification circuit and second switching means provided between said first and second terminals, andwherein said second switch circuit includes third switching means provided between said first terminal and the second power amplification circuit and fourth switching means provided between said first and third terminals, each of said second and fourth switching means is constituted by a single multi-gate transistor or a plurality of transistors connected in series, respective resistor elements are connected between a plurality of gate terminals of the transistor or transistors and an control input terminal used commonly thereamong, and resistance values of the resistor elements have been set such that the resistor element connected to the gate terminal closer to said first terminal has a larger resistance value.

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