Voltage sustaining layer with opposite-doped islands for semiconductor power devices

  • US 7,271,067 B2
  • Filed: 03/01/2006
  • Issued: 09/18/2007
  • Est. Priority Date: 10/29/1993
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of manufacturing a semiconductor device comprising:

  • preparing a semiconductor wafer with a substrate of a first conductivity type;

    forming a first epitaxial layer of the first conductivity type on the substrate, the first epitaxial layer having a first thickness;

    growing a first oxide layer on the first epitaxial layer;

    masking the first oxide layer;

    ion implanting to create at least one embedded island of dopant of the second conductivity type in the first epitaxial layer;

    removing the first oxide layer; and

    forming a final epitaxial layer of the first conductivity type on the first epitaxial layer, the second epitaxial layer having the first thickness plus a thickness equal to the depth of the embedded islands of the second conductivity type.

View all claims

    Thank you for your feedback