Semiconductor device

  • US 7,279,727 B2
  • Filed: 06/09/2005
  • Issued: 10/09/2007
  • Est. Priority Date: 07/22/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a diffusion region which is formed in the semiconductor substrate and serves as a region for the formation of a MIS transistor;

    an element isolation region surrounding the diffusion region;

    at least one gate conductor film which is formed across the diffusion region and the element isolation region, includes a gate electrode part located on the diffusion region and a gate interconnect part located on the element isolation region, and has a constant dimension in a gate length direction;

    an interlayer insulating film covering the gate electrode part; and

    a gate contact which passes through the interlayer insulating film, is connected to the gate interconnect part, and has a dimension in the gate length direction larger than the gate interconnect part.

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